BAS29,215 NXP Semiconductors, BAS29,215 Datasheet - Page 9

• Manufacturer Part Number: BAS29,215
• Description: DIODE SW 110V 250MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS29,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 90V
• Voltage - Forward (vf) (max) @ If: 1V @ 200mA
• Voltage - Dc Reverse (vr) (max): 90V
• Capacitance @ Vr, F: 35pF @ 0V, 1MHz
• Current - Average Rectified (io): 250mA (DC)
• Product: General Purpose Diodes
• Peak Reverse Voltage: 110 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 10 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933723180215::BAS29 T/R::BAS29 T/R

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [e-mail]
613514/05/pp9
Date of release: 2003 Mar 20
Document order number: 9397 750 10962