RB160A60T-32 Rohm Semiconductor, RB160A60T-32 Datasheet

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RB160A60T-32

Manufacturer Part Number
RB160A60T-32
Description
DIODE SCHOTTKY 60V 1A AXIAL MSR
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RB160A60T-32

Voltage - Forward (vf) (max) @ If
550mV @ 1A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
50µA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Diodes
Schottky barrier diode
RB160A60
General rectification
1) Cylindrical mold type. (MSR)
2) High I surge capability.
3) Low V
4) High ESD.
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (t=100µs)
Junction temperature
Storage temperature
(*1) Mounted on epoxy board. 180°Half sine wave
Forward voltage
Reverse current
ESD break down voltage
Features
Construction
Electrical characteristic (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
Parameter
F.
Parameter
Symbol
ESD
V
I
R
F
Min.
0.4
Symbol
20
-
Tstg
V
I
V
FSM
Io
Tj
RM
Taping specifications (Unit : mm)
R
Dimensions (Unit : mm)
ROHM : MSR
Typ.
7.00
H1
H2
0.5
-
Max.
29±1
0.55
BLUE
-55 to +150
50
-
L1
Limits
150
60
60
60
1
Manufacture Date
A
Unit
µA
kV
V
F
3.0±0.2
E
L2
C=100pF,R=1.5kΩ, forward and reverse : 1 times
I
V
CATHODE BAND
F
=1.0A
R
=60V
Unit
V
V
A
A
C
29±1
φ0.6±0.1
D
B
BROWN
Conditions
*H1(6mm):BROWN
Symbol
|L1-L2|
H1
H2
C
B
D
E
Rev.B
RB160A60
T-31   52.4±1.5
T-32
T-31   5.0±0.5
T-31
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
Standard dimension
φ2.5±0.2
value(mm)
26.0
5.0±0.3
1.0 max.
1/2A±1.2
1/2A±0.4
±0.7
0.2 max.
6.0±0.5
5.0±0.5
1.5 max.
0.4 max.
0
+0.4
0
1/3

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RB160A60T-32 Summary of contents

Page 1

Diodes Schottky barrier diode RB160A60 Applications General rectification Features 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low High ESD. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse ...

Page 2

Diodes Electrical characteristic curves 1 Ta=75℃ Ta=125℃ Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 0 200 400 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 530 Ta=25℃ IF=1A 520 n=30pcs 510 500 490 AVE:495.1mV 480 VF DISPERSION MAP 150 1cyc Ifsm 100 8.3ms AVE:85. ...

Page 3

Diodes 0.2 0.15 D=1/2 0.1 DC 0.05 Sin(θ=180 REVERSE VOLTAGE:VR(V) VR-P CHARACTERISTICS break at 30kV AVE:6.90kV 0 C=200pF C=100pF R=0Ω R=1.5kΩ ESD DISPERSION MAP 3 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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