RB160A90T-32 Rohm Semiconductor, RB160A90T-32 Datasheet

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RB160A90T-32

Manufacturer Part Number
RB160A90T-32
Description
DIODE SCHOTTKY 90V 1A AXIAL MSR
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RB160A90T-32

Voltage - Forward (vf) (max) @ If
730mV @ 1A
Voltage - Dc Reverse (vr) (max)
90V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
100µA @ 90V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Diodes
Schottky barrier diode
RB160A90
General rectification
1) Cylindrical mold type. (MSR)
2) High I surge capability.
3) Low I
4) High ESD.
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (t=100µs)
Junction temperature
Storage temperature
(*1) Mounted on epoxy board. 180°Half sine wave
Forward voltage
Reverse current
ESD break down voltage
Features
Construction
Electrical characteristics (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
Parameter
R
.
Parameter
Symbol
ESD
V
I
R
F
Min.
0.54
5
Symbol
-
Tstg
V
I
V
FSM
Io
Tj
Dimensions (Unit : mm)
RM
Taping specifications (Unit : mm)
R
ROHM : MSR
H1
Typ.
0.64
5.00
H2
-
29±1
Max.
0.73
BLUE
100
L1
-
-55 to +150
Limits
150
Manufacture Date
90
90
50
A
1
Unit
µA
kV
V
3.0±0.2
F
CATHODE BAND
E
L2
I
V
C=100pF,R=1.5kΩ forward and reverse : 1 time
F
=1.0A
R
=90V
Unit
V
V
A
A
29±1
φ0.6±0.1
C
D
B
BROWN
Conditions
*H1(6mm):BROWN
Symbol
|L1-L2|
H1
H2
B
C
D
E
Rev.D
T-31   52.4±1.5
T-32
T-31   5.0±0.5
T-31
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
φ2.5±0.2
RB160A90
Standard dimension
value(mm)
26.0
5.0±0.3
1.0 max.
1/2A±1.2
1/2A±0.4
±0.7
0.2 max.
6.0±0.5
5.0±0.5
1.5 max.
0.4 max.
0
+0.4
0
1/3

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RB160A90T-32 Summary of contents

Page 1

Diodes Schottky barrier diode RB160A90 Applications General rectification Features 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low High ESD. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) ...

Page 2

Diodes Electrical characteristic curves (Ta=25°C) 1 Ta=75℃ Ta=125℃ Ta=25℃ 0.1 Ta=150℃ Ta=-25℃ 0.01 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 650 Ta=25℃ IF=1A n=30pcs 640 630 620 AVE:632.1mV 610 600 VF DISPERSION MAP 200 1cyc ...

Page 3

Diodes 1 0.8 0.6 D=1/2 DC 0.4 0.2 Sin(θ=180 REVERSE VOLTAGE:VR(V) VR-P CHARACTERISTICS AVE:10.7kV 15 10 AVE:1.70kV 5 0 C=200pF C=100pF R=0Ω R=1.5kΩ ESD DISPERSION MAP ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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