RB551V-30TE-17 Rohm Semiconductor, RB551V-30TE-17 Datasheet
Home Discrete Semiconductor Products Diodes, Rectifiers - Single RB551V-30TE-17
Manufacturer Part Number
RB551V-30TE-17
Description
DIODE SCHOTTKY 20V 500MA SOD323
Manufacturer
Rohm Semiconductor
Specifications of RB551V-30TE-17
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
470mV @ 500mA
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
500mA
Current - Reverse Leakage @ Vr
100µA @ 20V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SC-90, SOD-323F
Repetitive Reverse Voltage Vrrm Max
30V
Forward Current If(av)
500mA
Forward Voltage Vf Max
470mV
Forward Surge Current Ifsm Max
2A
Operating Temperature Range
-40°C To
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.5 A
Max Surge Current
2 A
Configuration
Single
Forward Voltage Drop
0.47 V
Maximum Reverse Leakage Current
100 uA @ 20 V
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Part Number:
RB551V-30TE-17
Part Number:
RB551V-30TE-17
Manufacturer:
Rohm Semiconductor
Part Number:
RB551V-30TE-17
Part Number:
RB551V-30TE-17
Part Number:
RB551V-30TE-17
Part Number:
RB551V-30TE-17 (EDSY0010001)
Part Number:
RB551V-30TE-17 (DF172CC-11)
Diodes
Schottky barrier diode
RB551V-30
High frequency rectification
1) Small mold type. (UMD2)
2) Low V
3) High reliability.
Silicon epitaxial planar
R
R
A
Forward current s urge peak (60Hz ・ 1cyc ）
J
S
Forward voltage
Revers e current
unction tem perature
Applications
Features
Construction
Absolute maximum ratings (Ta = 25°C)
verage rectified forward current
Electrical characteristics (Ta = 25°C)
torage tem perature
evers e voltage (repetitive peak)
evers e voltage (DC)
F
.
Param eter
Param eter
Sym bol
V
V
External dimensions (Unit : mm)
JEITA : SC-90/A
Taping dimensions (Unit : mm)
I
JEDEC : S0D-323
F
F
R
ROHM : UMD2
Sym bol
1
2
4.0±0.1
Ts tg
V
I
FSM
1.40±0.1
V
Io
Tj
RM
dot (year week factory)
R
1.25±0.1
0.3±0.05
Min.
-
-
-
2.0±0.05
4.0±0.1
Typ.
-40 to +125
-
-
-
Lim its
500
125
30
20
2
φ1.55±0.05
0.1±0.1
0.05
Max.
0.36
0.47
100
0.7±0.2
0.1
φ1.05
Unit
µA
V
V
Unit
m A
℃
℃
I
I
V
V
V
A
F
F
R
=100m A
=500m A
Land size figure (Unit : mm)
Structure
UMD2
=20V
0.9MIN.
0.3±0.1
1.0±0.1
Conditions
Rev.C
RB551V-30
1/3
Related parts for RB551V-30TE-17
RB551V-30TE-17 Summary of contents
... Lim its Sym bol 500 FSM 125 Tj -40 to +125 Ts tg Sym bol Min. Typ. Max 0. 0. 100 R RB551V-30 Land size figure (Unit : mm) 0.9MIN. UMD2 Structure 0.3±0.1 1.0±0.1 Unit ℃ ℃ Unit Conditions V I =100m =500m A F µA V =20V R Rev.C 1/3 ...
... NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.5 DC D=1/2 0.4 0.3 Sin(θ＝180) 0.2 0.1 0 1000 0 0.2 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS RB551V-30 100 f=1MHz REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 80 Ta=25℃ f=1MHz VR=0V 70 n=10pcs 60 50 AVE:59.5pF 40 Ct DISPERSION MAP ...
... Sin(θ＝180) 0 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta D=t/T DC VR=15V Io 0.9 Tj=125℃ 0.8 0.7 D=1/2 0.6 0.5 0.4 0.3 0.2 Sin(θ＝180) 0.1 0 125 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) RB551V- 125 Rev.C 3/3 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
Related keywords
rb551ss RB551V-30TE-17 datasheet RB551V-30TE-17 data sheet RB551V-30TE-17 pdf datasheet RB551V-30TE-17 component RB551V-30TE-17 part RB551V-30TE-17 distributor RB551V-30TE-17 RoHS RB551V-30TE-17 datasheet download
