PRLL5817,135 NXP Semiconductors, PRLL5817,135 Datasheet
PRLL5817,135
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PRLL5817 /T3
PRLL5817 /T3
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PRLL5817,135 Summary of contents
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DATA SHEET alfpage M3D121 PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes Product data sheet Supersedes data of 1996 May 03 DISCRETE SEMICONDUCTORS 1999 Apr 22 ...
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... NXP Semiconductors Schottky barrier diodes FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed glass SMD package. APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection. DESCRIPTION The PRLL5817 to PRLL5819 types ...
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... NXP Semiconductors Schottky barrier diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V continuous reverse voltage R PRLL5817 PRLL5818 PRLL5819 V non-repetitive peak reverse voltage RSM PRLL5817 PRLL5818 PRLL5819 V repetitive peak reverse voltage RRM PRLL5817 PRLL5818 PRLL5819 V crest working reverse voltage ...
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... NXP Semiconductors Schottky barrier diodes ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER V forward voltage F PRLL5817 V forward voltage F PRLL5818 V forward voltage F PRLL5819 I reverse current R C diode capacitance d PRLL5817 PRLL5818 PRLL5819 Note = 300 μs; δ = 0.02. 1. Pulse test THERMAL CHARACTERISTICS SYMBOL ...
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... NXP Semiconductors Schottky barrier diodes GRAPHICAL DATA 5 handbook, halfpage 125 0.5 Fig.2 Typical forward voltage F(AV) (W) 0 Fig.3 PRLL817. Maximum values steady state forward power dissipation as a function of the average forward current F(RMS) F(AV). 1999 Apr 22 MBE634 ( 2 Product data sheet PRLL5817 ...
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... NXP Semiconductors Schottky barrier diodes 1 P F(AV) (W) 0 Fig.4 PRLL5818. Maximum values steady state forward power dissipation as a function of the average forward current F(RMS) F(AV F(AV) (W) 0 Fig.5 PRLL5819. Maximum values steady state forward power dissipation as a function of the average forward current ...
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... NXP Semiconductors Schottky barrier diodes 200 100 Fig.6 PRLL5817. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions. 200 100 Fig.8 PRLL5818. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions ...
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... NXP Semiconductors Schottky barrier diodes 200 100 Fig.10 PRLL5819. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions. 1999 Apr 22 MBE637 V RWM δ δ PRLL5817; PRLL5818; V RWM δ (W) 0. Fig.11 PRLL5819. Reverse power dissipation as a function of reverse voltage (max. values) ...
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... NXP Semiconductors Schottky barrier diodes PACKAGE OUTLINE Hermetically sealed glass surface mounted package; TM(1) Implotec technology; 2 connectors DIMENSIONS (mm are the original dimensions UNIT 2.1 2.0 3.7 mm 2.0 1.8 3.3 Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. OUTLINE VERSION ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...