1N5822 STMicroelectronics, 1N5822 Datasheet
1N5822
Specifications of 1N5822
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1N5822 Summary of contents
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... Rth July 2003 - Ed 150°C 0.475 V wheeling, polarity Parameter T = 100 110 Sinusoidal tp = 1µ 25°C 1N582x DO-201AD Value 1N5820 1N5821 1N5822 1700 - 150 150 10000 Unit °C °C V/µs 1/5 ...
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... Lead length = 10 mm Lead length = 10 mm Tests Conditions RRM Tj = 100 9 for 1N5820 / 1N5821 for 1N5822 Fig. 2: Average forward power dissipation versus average forward current (1N5822). PF(av)(W) 2.0 = 0.5 1.8 1 1.4 1.2 1.0 0.8 0.6 T 0.4 0.2 tp =tp/T 0.0 3.0 3.5 4.0 ...
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... Single pulse 0.0 1E-1 1E+0 1E+1 Fig. 5-2: Average forward current versus ambient temperature ( =0.5) (1N5822). IF(av)(A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 100 125 150 Fig. 6-2: current versus overload duration (maximum values) (1N5822) ...
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... Fig. 11: Non repetitive surge peak forward current versus number of cycles. IFSM(A) 100 Number of cycles 4/5 Fig. 9-2: Reverse leakage current versus reverse voltage applied (typical values) (1N5822). IR(mA) 5E+1 1N5821 1E+1 1E+0 1E-1 1E-2 1E Fig. 10-2: Forward voltage drop versus forward current (typical values) (1N5822) ...
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... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. ...