BYT03-400RL STMicroelectronics, BYT03-400RL Datasheet

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... Very low conduction losses Negligible switching losses Low forward & reverse recovery times DESCRIPTION The BYT03-400 which is using ST’s 400V planar technology, is specially suited for switching mode base drive & transistor circuits. The device, which is available in axial (DO-201AD) package, is also intended for use as a free wheeling diode in power supplies and other power switching applications ...

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... BYT03-400 THERMAL PARAMETERS Symbol R Junction to ambient* th(j- infinite heatsink with 10mm lead length. STATIC ELECTRICAL CHARACTERISTICS Symbol Parameters I * Reverse leakage current Forward voltage drop F Pulse test 5ms, < 380µs, < evaluate the maximum conduction losses use the following equation 1 0.08 I F(AV) F (RMS) ...

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... Single pulse 0 1.E-01 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF BYT03-400 Rth(j-a)=Rth(j-l) Rth(j-a)=75°C/W Tamb(° 100 tp(s) =tp/T 1.E+00 1.E+01 1.E+02 VR(V) 10 100 125 150 T tp 1.E+03 F=1MHz Vosc=30mV Tj=25°C 1000 ...

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... BYT03-400 Fig. 7: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 200 180 160 140 120 100 dIF/dt(A/µ Fig. 9: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 2.5 IF=3A VR=200V 2.0 1.5 1.0 0.5 dIF/dt(A/µs) 0 Fig. 11: Non repetitive surge peak current versus number of cycles ...

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... E 1.25 Ordering code Marking BYT03-400 BYT03-400 BYT03-400RL BYT03-400 Cooling method: by conduction (method A) Epoxy meets UL 94,V0 Bending method: Application note AN1471. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...