DSEI30-10AR IXYS, DSEI30-10AR Datasheet
DSEI30-10AR
Manufacturer Part Number
DSEI30-10AR
Description
DIODE FRED 1000V 30A ISOPLUS247
Manufacturer
IXYS
Datasheet
1.DSEI30-10A.pdf
(2 pages)
Specifications of DSEI30-10AR
Voltage - Forward (vf) (max) @ If
2.4V @ 36A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
30A
Current - Reverse Leakage @ Vr
750µA @ 1000V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole, Radial
Package / Case
ISOPLUS247™
Vrrm, (v)
1000
Ifavm, D = 0.5, Total, (a)
30
Ifavm, D = 0.5, Per Diode, (a)
30
@ Tc, (°c)
85
Ifrms, (a)
70
Ifsm, 10 Ms, Tvj=45°c, (a)
200
Vf, Max, Tvj =150°c, (v)
2.00
@ If, (a)
36
Trr, Typ, Tvj =25°c, (ns)
35
Irm , Typ, Tvj =100°c, (a)
16
@ -di/dt, (a/µs)
240
Tvjm, (°c)
150
Rthjc, Max, (k/w)
0.90
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSEI30-10AR
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2000 IXYS All rights reserved
Fast Recovery
Epitaxial Diode (FRED)
V
V
1000
1000
Symbol
I
I
I
I
I
T
T
T
P
M
F
V
Weight
* Verson A only; ** Version AR only
Symbol
I
V
V
r
R
R
R
t
I
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
FRMS
FAVM
FRM
FSM
2
R
rr
RM
T
t
VJ
VJM
stg
C
RSM
tot
ISOL
F
T0
thJC
thCK
thJA
d
I
*
FAVM
ÿÿ
**
rating includes reverse blocking losses at T
1000
1000
V
T
T
t
T
T
T
T
T
Mounting torque
mounting force with clip
50/60 Hz, RMS, t = 1 minute, leads-to-tab
T
T
T
I
For power-loss calculations only
T
I
V
L £ 0.05 mH; T
Test Conditions
Test Conditions
V
P
F
F
RRM
VJ
C
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
R
< 10 ms; rep. rating, pulse width limited by T
= 36 A;
= 1 A; -di/dt = 100 A/ms; V
= 85°C; rectangular, d = 0.5
= 25°C
= 540 V;
= T
= 45°C;
= 150°C; t = 10 ms (50 Hz), sine
= 45°C
= 150°C; t = 10 ms (50 Hz), sine
= 25°C
= 25°C
= 125°C
= T
VJM
VJM
VJ
Type
DSEI 30-10A
DSEI 30-10AR
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
V
V
V
T
T
I
F
VJ
VJ
R
R
R
= 100°C
= 30 A; -di
= V
= 0.8 • V
= 0.8 • V
= 150°C
= 25°C
RRM
F
RRM
RRM
/dt = 240 A/ms
R
VJM
= 30 V; T
, V
R
= 0.8 V
VJ
= 25°C
RRM
, duty cycle d = 0.5
VJM
typ.
0.25
35
16
-40...+150
-40...+150
Characteristic Values
0.8...1.2
20...120
Maximum Ratings
375
200
210
185
195
200
180
170
160
150
138
A
70
30
max.
DSEI 30
12.5
750
250
6
2500
2.4
1.5
0.9
35
50
18
7
2
K/W
K/W
K/W
mW
A
A
A
A
Nm
mA
V~
mA
mA
°C
°C
°C
ns
W
N
A
A
A
A
A
A
A
g
V
V
V
A
2
2
2
2
s
s
s
s
C
I
V
t
TO-247 AD
Version A
C
A = Anode, C = Cathode
Features
Applications
Advantages
FAVM
A
rr
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behavior
Version AR isolated and
Epoxy meets UL 94V-0
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
UL registered E153432
RRM
RM
-values
= 30 A
= 1000 V
= 35 ns
C (TAB)
C
ISOPLUS 247
A
*
Patent pending
Version AR
back surface
Isolated
1 - 2
TM
*
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DSEI30-10AR Summary of contents
Page 1
... A; - £ 0.05 mH 100° rating includes reverse blocking losses at T FAVM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved DSEI 30 A Maximum Ratings 70 30 375 VJM 200 210 ...
Page 2
... Fig. 1 Forward current versus voltage drop. Fig. 4 Dynamic parameters versus junction temperature. Fig. 7 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved Fig. 2 Recovery charge versus -di /dt. F Fig. 5 Recovery time versus -di /dt. F Dimensions DSEI 30, 1000 V Fig. 3 Peak reverse current versus -di /dt ...