DSAI75-12B IXYS, DSAI75-12B Datasheet

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DSAI75-12B

Manufacturer Part Number
DSAI75-12B
Description
DIODE CATH 1200V 110A DO-203AB
Manufacturer
IXYS
Datasheet

Specifications of DSAI75-12B

Voltage - Forward (vf) (max) @ If
1.17V @ 150A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
110A
Current - Reverse Leakage @ Vr
6mA @ 1200V
Diode Type
Avalanche
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AB, DO-5, Stud
Vrrm, (v)
1200
Ifavm, Total, (a)
110
Ifavm, Per Diode, (a)
110
@ Tc, (°c)
100
Prsm, (kw)
20
Ifrms, (a)
160
Ifsm, 10 Ms, Tvj = 45°c, (a)
1400
Vt0, (v)
0.75
Rt, (mohms)
2
Tvjm, (°c)
180
Rthjc, Max, (k/w)
0.5
Rthch, (k/w)
0.3
Package Style
DO-203AB (DO-5)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Rectifier Diode
Avalanche Diode
V
Symbol
I
I
P
I
I
T
T
T
M
Weight
Symbol
I
V
V
r
R
R
d
d
a
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1300
1300
1700
1900
F(RMS)
F(AV)M
FSM
2
R
T
t
VJ
VJM
stg
S
A
RSM
RSM
F
T0
thJC
thJH
V
900
d
Only for Avalanche Diodes
V
1300
1760
1950
(BR)min
V
-
-
Test Conditions
T
T
DSA(I) types, T
T
V
T
V
T
V
T
V
Mounting torque
Test Conditions
T
I
For power-loss calculations only
T
DC current
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
F
VJ
case
VJ
VJ
VJ
VJ
VJ
VJ
R
R
R
R
ÿ
= T
= 100°C; 180° sine
= 45°C;
= 0
= T
= 0
= 45°C
= 0
= T
= 0
= T
= 150 A; T
= T
1200
1200
1600
1800
V
V
800
VJM
VJM
VJM
VJM
VJM
RRM
; V
R
= V
VJ
VJ
DS 75-08B
DS 75-12B
DSA 75-12B
DSA 75-16B
DSA 75-18B
= T
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
= 25°C
RRM
Anode
on stud
VJM
, t
p
= 10 ms
DSI 75-08B
DSI 75-12B
DSAI 75-12B
DSAI 75-16B
DSAI 75-18B
Cathode
on stud
Characteristic Values
-40...+180
-40...+180
Maximum Ratings
£
£
2.4-4.5
21-40
1400
1500
1250
1310
9800
9450
7820
7210
1.17
0.75
4.05
160
110
180
100
0.5
0.9
3.9
20
21
6
2
lb.in.
K/W
K/W
m/s
mm
mm
A
Nm
mW
kW
A
A
A
mA
°C
°C
°C
A
A
A
A
A
A
V
V
g
2
2
2
2
s
s
s
s
2
V
I
I
DO-203 AB
C
A
A = Anode
Features
Applications
Advantages
Dimensions in mm (1 mm = 0.0394")
F(RMS)
F(AV)M
International standard package,
JEDEC DO-203 AB (DO-5)
Planar glassivated chips
High power rectifiers
Reduced protection circuits
Field supply for DC motors
Power supplies
Space and weight savings
Simple mounting
Improved temperature and power
cycling
RRM
DS 75
DSA 75
DS
DSA
= 800-1800 V
= 160 A
= 110 A
C = Cathode
1/4-28UNF
DSI 75
DSAI 75
A
C
DSI
DSAI
1 - 2
744

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DSAI75-12B Summary of contents

Page 1

... Creepage distance on surface S d Strike distance through air A a Max. allowable acceleration Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved Cathode on stud DSI 75-08B DSI 75-12B DSAI 75-12B DSAI 75-16B ...

Page 2

... I F(AV)M Fig. 4 Power dissipation versus forward current and ambient temperature 1.5 K/W Z thJH 1.0 0.5 0 Fig. 6 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 1500 50Hz, 80%V RRM A I FSM T = 45°C 1000 VJ 500 T = 180° ...

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