CLS02(TE16L,Q) Toshiba, CLS02(TE16L,Q) Datasheet

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CLS02(TE16L,Q)

Manufacturer Part Number
CLS02(TE16L,Q)
Description
DIODE SCHOTTKY 40V 10A L-FLAT
Manufacturer
Toshiba
Datasheet

Specifications of CLS02(TE16L,Q)

Voltage - Forward (vf) (max) @ If
550mV @ 10A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
1mA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Switching-Mode Power Supply (Secondary-Rectification)
Applications (Low Voltage)
DC/DC Converter Applications
Absolute Maximum Ratings
Electrical Characteristics
Forward voltage: V
Average forward current: I
Repetitive peak reverse voltage: V
Suitable for compact assembly due to small surface-mount package:
“L−FLAT
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak surge current
Junction temperature
Storage temperature range
Note1: Tℓ = 75°C
Note2: Using continuously under heavy loads (e.g. the application of high
Peak forward voltage
Peak repetitive reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
temperature/current/voltage
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Rectangular waveform (α = 180°), V
TM
Characteristics
Characteristics
” (Toshiba package name)
FM
= 0.55 V (max)
F (AV)
(Ta = 25°C)
= 10 A
RRM
(Ta = 25°C)
and
TOSHIBA Schottky Barrier Diode
Symbol
Symbol
I
I
V
V
V
R
RRM (1)
RRM (2)
R
I
V
F (AV)
I
FM (1)
FM (2)
FM (3)
T
th (j-a)
FSM
th (j-ℓ)
RRM
C
T
= 40 V
stg
j
j
R
the
= 20 V
CLS02
I
I
I
V
V
V
Device mounted on a glass-epoxy
board
(board size: 50 mm × 50 mm)
(board thickness: 1.6 t)
(soldering land)
FM
FM
FM
significant
RRM
RRM
R
100 (50 Hz)
Cathode 5.7 mm × 6.2 mm
Anode
10 (Note.1)
−40~125
−40~150
= 10 V, f = 1.0 MHz
= 3.0 A (pulse test)
= 5.0 A (pulse test)
= 10 A (pulse test)
Rating
= 5 V (pulse test)
= 40 V (pulse test)
40
1
Test Condition
4.5 mm × 3.4 mm
change
Unit
°C
°C
V
A
A
in
Weight: 0.15 g (typ.)
JEDEC
JEITA
TOSHIBA
1.5 ± 0.1
Min
4 ± 0.2
Typ.
0.36
0.41
0.03
420
0.5
4.0
3-4F1A
1.2 ± 0.1
2007-11-06
Max
0.55
100
1.0
① ANODE
② CATHODE
5
2.7 ± 0.2
CLS02
Unit: mm
0.6 ± 0.1
°C/W
°C/W
Unit
mA
μA
pF
V

Related parts for CLS02(TE16L,Q)

CLS02(TE16L,Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

Marking Abbreviation Code Part No. S02 CLS02 Standard Soldering Pad 1.8 2.6 Handling Precautions 1) Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility that SBD will cause thermal runaway when used under high-temperature ...

Page 3

F F 100 125°C 10 75°C 1 25°C 0.1 Pulse test 0.01 0.0 0.2 0.4 0.6 Instantaneous forward voltage v Tℓ max – (AV) 140 120 100 80 α = 60° 120° ...

Page 4

C – 10000 5000 1000 500 100 Reverse voltage V ( – 1000 Pulse test 100 0 ...

Page 5

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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