IDV04S60C Infineon Technologies, IDV04S60C Datasheet
IDV04S60C
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IDV04S60C Summary of contents
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... S iC Silicon Carbide Diode ™ 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Rev. 2.0, 2010-01-08 Final & ...
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... Value V 600 < 100° Table 2 Pin Definition Pin 1 Pin2 C A Type / Ordering Code Package IDV04S60C PG-TO220 FullPAK 1) J-STD20 and JESD22 Final Data Sheet 1) for target applications Unit Pin 3 n.a. Marking D04S60C 2 IDV04S60C Related Links IFX SiC Diodes Webpage Rev. 2.0, 2010-01-08 ...
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... Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode 3 IDV04S60C Table of Contents Rev. 2.0, 2010-01-08 ...
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... F, max ∫i² 600 RRM dv/ tot 175 j stg - - 50 Symbol Values Min. Typ thJC thJA sold 4 IDV04S60C Maximum ratings Unit Note / Test Condition < 110° 25° 150° 25° µ A² 25° 150° 25° 0...480 °C C °C Ncm M2.5 screws ...
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... Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode Symbol Values Min. Typ. V 600 - 1 0 Symbol Values Min. Typ 130 - IDV04S60C Electrical characteristics Unit Note / Test Condition Max ° ° 2 150 ° µ 600 V, T =25 ° 500 = 600 V, =150 ° ...
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... Table 8 Typ. forward characteristic I =f =400 µ s; parameter Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode Diode forward current I =f Typ. forward characteristic in surge current I =f IDV04S60C Electrical characteristics diagrams ≤ 175 °C j =400 µs; parameter Rev. 2.0, 2010-01-08 ...
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... Table 10 Typ. transient thermal impedance ; Z =f(tp) parameter thjc P Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode 1) Typ. reverse current vs. reverse voltage I =f max R R Typ. capacitance vs. reverse voltage C=f IDV04S60C Electrical characteristics diagrams =25 °C, f=1 MHz C Rev. 2.0, 2010-01-08 ...
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... Table 11 Typ. C stored energy E =f Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode Electrical characteristics diagrams 8 IDV04S60C Rev. 2.0, 2010-01-08 ...
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... Package outlines Figure 1 Outlines TO-220 FullPAK, dimensions in mm/inches Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode 9 IDV04S60C Package outlines Rev. 2.0, 2010-01-08 ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode erratum@infineon.com 10 IDV04S60C Revision History Rev. 2.0, 2010-01-08 ...