IDH04S60C Infineon Technologies, IDH04S60C Datasheet

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IDH04S60C

Manufacturer Part Number
IDH04S60C
Description
DIODE SCHOTTKY 600V 4A TO220-2
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of IDH04S60C

Diode Type
Silicon Carbide Schottky
Voltage - Forward (vf) (max) @ If
1.9V @ 4A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
4A (DC)
Current - Reverse Leakage @ Vr
50µA @ 600V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
130pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
4A
Forward Voltage Vf Max
1.9V
Forward Surge Current Ifsm Max
32A
Operating Temperature Range
-55°C To +175°C
Technology
thinQ!™ 2G
V
600.0 V
If (typ)
4.0 A
Qc (typ)
8.0 nC
Package
TO-220 real 2pin
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IDT04S60C
IDT04S60C
IDT04S60CX
IDT04S60CXK
SP000080225
SP000657976

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDH04S60C
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IDH04S60C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.0
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Breakdown voltage tested at 5mA
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Maximum ratings, at T
Parameter
Continuous forward current
RMS forward current
Surge non-repetitive forward current,
sine halfwave
Repetitive peak forward current
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
Soldering temperature,
wavesoldering only allowed at leads
2
Type
IDH04S60C
nd
Generation thinQ!
Package
PG-TO220-2
j
=25 °C, unless otherwise specified
TM
SiC Schottky Diode
1)
for target applications
2)
Symbol Conditions
dv/ dt
I
I
I
I
I
∫i
V
P
T
T
F
F,RMS
F,SM
F,RM
F,max
2
j
sold
RRM
tot
, T
dt
Marking
D04S60C
stg
T
f =50 Hz
T
T
T
T
T
V
T
M3 and M3.5 screws
1.6mm (0.063 in.) from
case for 10s
page 1
C
C
j
C
C
C
C
R
=150 °C,
<140 °C
=25 °C, t
=100 °C, D =0.1
=25 °C, t
=25 °C, t
=25 °C
= 0….480V
Pin 1
C
p
p
p
=10 ms
=10 µs
=10 ms
Product Summary
V
Q
I
F
DC
c
Pin 2
A
-55 ... 175
Value
132
600
260
5.6
5.1
32
18
50
42
60
4
IDH04S60C
600
8
4
Unit
A
A
V
V/ns
W
°C
Mcm
°C
V
nC
A
2
2009-07-03
s

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IDH04S60C Summary of contents

Page 1

... F,max =25 °C, t =10 ms ∫ RRM V = 0….480V dv =25 °C tot stg M3 and M3.5 screws 1.6mm (0.063 in.) from T sold case for 10s page 1 IDH04S60C 600 Pin 2 A Value Unit 132 2 5 600 -55 ... 175 °C 60 Mcm 260 °C ...

Page 2

... V =600 V, T =150 ° =400 V,I ≤ F,max c di /dt =200 A/µ =150 ° MHz =300 MHz R V =600 MHz di/dt. No reverse recovery time constant t j LOAD page 2 IDH04S60C Values Unit min. typ. max 3.6 K 600 - - V - 1.7 1 2.4 - 0.5 50 µ 500 , - < ...

Page 3

... C 4 Typ. forward characteristic in surge current mode I =f -55ºC 150ºC 25ºC 100º 175º F[V] page 3 IDH04S60C ≤175 ° thJC(max) F(max 100 125 150 175 T [°C] C =400 µs; parameter 175ºC 150ºC -55ºC 25ºC 100º F[V] ...

Page 4

... Typ. reverse current vs. reverse voltage I =f parameter 0 100 [A] 8 Typ. capacitance vs. reverse voltage C =f 200 175 150 125 100 [s] P page 4 IDH04S60C j 175 °C 150 °C 100 °C 25 °C -55 °C 200 300 400 500 V [V] R =25 ° MHz [V] R 600 3 10 2009-07-03 ...

Page 5

... Typ. C stored energy E =f 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 V Rev. 2.0 10 Typ. capacitance charge vs. current slope Q =f(di / 300 400 500 600 100 [V] R page 5 IDH04S60C =150 °C; I ≤ F,max 400 700 di /dt [A/µs] F 1000 2009-07-03 ...

Page 6

... PG-TO220-2: Outline Dimensions in mm/inches Rev. 2.0 page 6 IDH04S60C 2009-07-03 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 IDH04S60C 2009-07-03 ...

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