HFA08TB60STRL Vishay, HFA08TB60STRL Datasheet

DIODE HEXFRED 600V 8A D2PAK

HFA08TB60STRL

Manufacturer Part Number
HFA08TB60STRL
Description
DIODE HEXFRED 600V 8A D2PAK
Manufacturer
Vishay
Series
HEXFRED®r
Datasheet

Specifications of HFA08TB60STRL

Voltage - Forward (vf) (max) @ If
1.7V @ 8A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
5µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
55ns
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Capacitance @ Vr, F
-
Other names
VS-HFA08TB60STRL
VS-HFA08TB60STRL
VSHFA08TB60STRL
VSHFA08TB60STRL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HFA08TB60STRL
Manufacturer:
INTERSIL
Quantity:
5 291
Part Number:
HFA08TB60STRLPBF
Manufacturer:
IR
Quantity:
10 400
Document Number: 93045
Revision: 22-Oct-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
V
dI
F
T
(rec)M
at 8 A at 25 °C
J
Q
t
rr
(maximum)
rr
(typical)
I
I
(typical)
/dt (typical)
F(AV)
RRM
V
R
N/C
D
1
cathode
Base
2
PAK
+
2
Ultrafast Soft Recovery Diode, 8 A
3
-
Anode
For technical questions, contact: diodes-tech@vishay.com
240 A/µs
150 °C
600 V
65 nC
18 ns
1.7 V
5.0 A
8 A
SYMBOL
T
HEXFRED
J
I
I
FSM
FRM
, T
V
P
I
F
R
D
Stg
T
T
T
C
C
C
TEST CONDITIONS
= 100 °C
= 25 °C
= 100 °C
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA08TB60S is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 8 A continuous current, the
HFA08TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60S is ideally
suited for applications in power supplies (PFC boost diode)
and power conversion systems (such as inverters), motor
drives, and many other similar applications where high
speed, high efficiency is needed.
®
RRM
rr
Vishay High Power Products
- 55 to + 150
VALUES
600
8.0
60
24
36
14
HFA08TB60S
®
product line features
www.vishay.com
UNITS
°C
W
V
A
RRM
) and
1
b

Related parts for HFA08TB60STRL

HFA08TB60STRL Summary of contents

Page 1

... SYMBOL TEST CONDITIONS 100 ° FSM I FRM ° 100 ° Stg For technical questions, contact: diodes-tech@vishay.com HFA08TB60S Vishay High Power Products RRM rr ® product line features VALUES UNITS 600 8 150 °C www.vishay.com ) and RRM ...

Page 2

... 125 °C J /dt1 °C J /dt2 T = 125 °C J TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Typical socket mount 2 Case style D PAK For technical questions, contact: diodes-tech@vishay.com MIN. TYP. MAX. 600 - - - 1.4 1.7 See fig 1.7 2.1 - 1.4 1.7 - 0.3 5.0 See fig ...

Page 3

... V - Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.01 0.0001 0.001 t - Rectangular Pulse Duration (s) 1 Fig Maximum Thermal Impedance Z For technical questions, contact: diodes-tech@vishay.com HFA08TB60S Vishay High Power Products 1000 T = 150 °C J 100 T = 125 ° 0 °C J ...

Page 4

... 100 dI /dt (A/µs) F Fig Typical Recovery Current vs. dI www.vishay.com 4 ® HEXFRED Ultrafast Soft Recovery Diode 1000 /dt F 1000 /dt F For technical questions, contact: diodes-tech@vishay.com 500 V = 200 125 ° °C 400 J 300 200 100 0 100 dI /dt (A/µs) F Fig Typical Stored Charge vs. dI ...

Page 5

... I RRM (5) dI (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions LINKS TO RELATED DOCUMENTS For technical questions, contact: diodes-tech@vishay.com HFA08TB60S Vishay High Power Products ( 0.5 I RRM (5) dI /dt (rec)M RRM ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords