HFA04TB60STRL Vishay, HFA04TB60STRL Datasheet

DIODE HEXFRED 600V 4A D2PAK

HFA04TB60STRL

Manufacturer Part Number
HFA04TB60STRL
Description
DIODE HEXFRED 600V 4A D2PAK
Manufacturer
Vishay
Series
HEXFRED®r
Datasheet

Specifications of HFA04TB60STRL

Voltage - Forward (vf) (max) @ If
1.8V @ 4A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
4A
Current - Reverse Leakage @ Vr
3µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
42ns
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Capacitance @ Vr, F
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HFA04TB60STRLP
Manufacturer:
IR
Quantity:
20 000
Document Number: 93033
Revision: 22-Oct-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
dI
V
(rec)M
F
T
Q
at 4 A at 25 °C
J
t
rr
rr
(maximum)
at 125 °C
/dt at 125 °C
(typical)
I
F(AV)
V
R
Anode -
1
common
D
cathode
Base
2
PAK
+
Ultrafast Soft Recovery Diode, 4 A
2
-
3
Anode
For technical questions, contact: diodes-tech@vishay.com
280 A/µs
150 °C
40 nC
600 V
17 ns
1.8 V
4 A
SYMBOL
HEXFRED
T
J
I
I
FSM
FRM
, T
V
P
I
F
R
D
Stg
T
T
T
C
C
C
TEST CONDITIONS
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA04TB60S is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 4 A continuous current, the
HFA04TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
t
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA04TB60S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
= 100 °C
= 25 °C
= 100 °C
b
portion of recovery. The HEXFRED features combine to
®
RRM
rr
Vishay High Power Products
- 55 to + 150
VALUES
600
25
16
25
10
4
HFA04TB60S
®
product line features
www.vishay.com
UNITS
°C
W
V
A
RRM
) and
1

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HFA04TB60STRL Summary of contents

Page 1

... SYMBOL TEST CONDITIONS 100 ° FSM I FRM ° 100 ° Stg For technical questions, contact: diodes-tech@vishay.com HFA04TB60S Vishay High Power Products RRM rr ® product line features VALUES UNITS 600 150 www.vishay.com ) and RRM °C 1 ...

Page 2

... 125 °C J /dt1 °C J /dt2 T = 125 °C J TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Typical socket mount 2 Case style D PAK For technical questions, contact: diodes-tech@vishay.com MIN. TYP. MAX. 600 - - - 1.5 1.8 See fig 1.8 2.2 - 1.4 1.7 - 0.17 3.0 See fig ...

Page 3

... V - Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.01 0.0001 0.001 t - Rectangular Pulse Duration (s) 1 thJC For technical questions, contact: diodes-tech@vishay.com HFA04TB60S Vishay High Power Products 1000 T = 150 °C J 100 T = 125 ° °C J 0.1 0.01 0.001 ...

Page 4

... T = 125 ° ° 100 dI /dt (A/µs) F Fig Typical Recovery Current vs. dI www.vishay.com 4 ® HEXFRED Ultrafast Soft Recovery Diode 1000 /dt F 1000 /dt F For technical questions, contact: diodes-tech@vishay.com 200 V = 200 V R 180 T = 125 ° °C J 160 140 120 100 100 dI /dt (A/µs) F Fig ...

Page 5

... F ( area under curve defined and I RRM (5) dI (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions For technical questions, contact: diodes-tech@vishay.com HFA04TB60S Vishay High Power Products ( 0.5 I RRM (5) dI /dt (rec)M RRM rr t ...

Page 6

... Process designator Subs. electron irradiated B = Subs. platinum - Current rating ( Package outline (TB = TO-220, 2 leads) - Voltage rating (60 = 600 V) - Configuration (S = SMD) - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS For technical questions, contact: diodes-tech@vishay.com http://www.vishay.com/doc?95046 http://www.vishay.com/doc?95054 http://www.vishay.com/doc?95032 Document Number: 93033 Revision: 22-Oct-08 ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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