BAS29_D87Z Fairchild Semiconductor, BAS29_D87Z Datasheet
BAS29_D87Z
Manufacturer Part Number
BAS29_D87Z
Description
DIODE GEN PURP 120V 200MA SOT23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAS29.pdf
(2 pages)
Specifications of BAS29_D87Z
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Voltage - Dc Reverse (vr) (max)
120V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
100nA @ 90V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2002 Fairchild Semiconductor Corporation
V
I
I
T
T
P
R
Small Signal Diode
V
V
I
C
t
Symbol
F(AV)
FSM
Symbol
Absolute Maximum Ratings*
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
*
R
rr
Symbol
stg
J
RRM
D
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Pulse test : Pulse width=300us, Duty Cycle=2%
R
F
*
T
JA
*
3
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
SOT-23
1
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
2
Parameter
Parameter
T
A
= 25°C unless otherwise noted
BAS29
T
A
= 25°C unless otherwise noted
1
L20
I
I
I
I
I
I
V
V
V
I
R
R
F
F
F
F
F
F
R
R
R
L
= 10 mA
= 50 mA
= 100 mA
= 200 mA
= 400 mA
= I
= 1.0 mA
= 90 V
= 90 V, T
= 0, f = 1.0 MHz
= 100
3
Test Conditions
R
= 30 mA, I
2
A
= 150 C
RR
= 3.0 mA,
Connection Diagram
-55 to +150
Min
120
Value
Value
120
200
150
350
357
1.0
2.0
1
Max
3
0.75
0.84
0.90
1.00
1.25
100
100
2.0
50
2NC
Units
Units
Units
mW
mA
C/W
V
A
A
C
C
nA
pF
ns
V
V
V
V
V
V
A
BAS29, Rev. A
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BAS29_D87Z Summary of contents
Page 1
... Electrical Characteristics Symbol Parameter V Breakdown Voltage Forward Voltage Reverse Current R C Total Capacitance T Reverse Recovery Time Pulse test : Pulse width=300us, Duty Cycle=2% 2002 Fairchild Semiconductor Corporation BAS29 3 L20 25°C unless otherwise noted A Parameter Parameter T = 25°C unless otherwise noted A Test Conditions ...
Page 2
CROSSVOLT â â â â Rev. H5 ...