MMBD914_D87Z Fairchild Semiconductor, MMBD914_D87Z Datasheet
MMBD914_D87Z
Manufacturer Part Number
MMBD914_D87Z
Description
DIODE SS 100V 200MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBD914.pdf
(4 pages)
Specifications of MMBD914_D87Z
Voltage - Forward (vf) (max) @ If
1V @ 10mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
5µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
Symbol
Symbol
Absolute Maximum Ratings*
*
Thermal Characteristics
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Small Signal Diode
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
I
I
T
T
P
R
V
V
I
C
t
V
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
FR
T
JA
3
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Peak Forward Recovery Voltage
SOT-23
1
Parameter
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
2
Parameter
Parameter
T
A
= 25°C unless otherwise noted
MMBD914
T
A
I
I
I
V
V
V
V
I
I
I
WAVE PULSE WIDTH = 0.1 S
5 kHz – 100 kHz REP RATE
1
= 25°C unless otherwise noted
R
R
F
F
RR
F
R
R
R
R
= 10 mA
= 10 mA, V
= 5.0 A
= 100 A
5D
= 20 V
= 20 V, T
= 75 V
= 0, f = 1.0 MHz
= 50 mA PEAK SQUARE
= 1.0 mA, R
3
Test Conditions
2
A
R
= 150 C
= 6.0V,
L
= 100
Connection Diagram
-55 to +150
Min
100
Value
Value
75
100
200
150
350
357
1.0
2.0
1
3
Max
1.0
5.0
4.0
4.0
2.5
2NC
25
50
Units
Units
Units
mW
mA
C/W
MMBD914, Rev. C
V
A
A
C
C
nA
pF
ns
V
V
V
V
A
A
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MMBD914_D87Z Summary of contents
Page 1
... Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Current R C Total Capacitance T Reverse Recovery Time t rr Peak Forward Recovery Voltage V FR 2001 Fairchild Semiconductor Corporation MMBD914 25°C unless otherwise noted A Parameter Parameter T = 25°C unless otherwise noted A Test Conditions 100 A ...
Page 2
Typical Characteristics 4.0 ° Ta 3.5 3.0 2.5 2.0 1.5 1 Reverse Current [mA] Figure 7. Reverse Recovery Time vs Reverse Current TRR - 500 400 300 200 ...
Page 3
Typical Characteristics 150 ° Ta 140 130 120 110 Reverse Current, I [uA] R Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA Ta ° 450 400 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...