MBR340 ON Semiconductor, MBR340 Datasheet - Page 2

• Manufacturer Part Number: MBR340
• Description: DIODE SCHOTTKY 40V 3A DO201AD
• Manufacturer: ON Semiconductor

Specifications of MBR340

• Voltage - Forward (vf) (max) @ If: 600mV @ 3A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 600µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: MBR340OS

3. Lead Temperature reference is cathode lead 1/32in from case.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 4)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 4)
0.07
0.05
0.03
0.02
0.01
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
20
10
(i
(i
(i
T
T
F
F
F
L
L
= 1.0 Amp)
= 3.0 Amp)
= 9.4 Amp)
= 25°C
= 100°C
0.1
T
J
Figure 1. Typical Forward Voltage
= 150°C
0.2
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.3
0.4
100°C
0.5
25°C
0.6
Characteristic
(T
L
= 25°C unless otherwise noted) (Note 3)
0.7
0.8
0.9
http://onsemi.com
MBR340
2
0.004
0.002
0.001
0.04
0.02
0.01
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selec-
tions can be estimated from these same curves if V
below rated V
100
4.0
2.0
1.0
0.4
0.2
0.1
40
20
10
0
8.0
6.0
4.0
2.0
10
0
20
Figure 2. Typical Reverse Current*
R
.
10
(Mounting Method #3 per Note 5)
40
SQUARE
V
WAVE
R
Figure 3. Current Derating
T
REVERSE VOLTAGE (VOLTS)
A
, AMBIENT TEMPERATURE (C°)
60
Symbol
20
80
v
i
R
F
100
150°C
100°C
75°C
25°C
120
30
0.500
0.600
0.850
Max
0.60
140
20
dc
R
is sufficiently
160
40
180
Unit
mA
V
1000
100
10
10
200