DIODE SCHOTTKY 600V 4A D-PAK

SDD04S60

Manufacturer Part NumberSDD04S60
DescriptionDIODE SCHOTTKY 600V 4A D-PAK
ManufacturerInfineon Technologies
SeriesthinQ!™
SDD04S60 datasheet
 


Specifications of SDD04S60

Package / CaseDPak, TO-252 (2 leads+tab), SC-63Voltage - Forward (vf) (max) @ If1.9V @ 4A
Voltage - Dc Reverse (vr) (max)600VCurrent - Average Rectified (io)4A (DC)
Current - Reverse Leakage @ Vr200µA @ 600VDiode TypeSilicon Carbide Schottky
SpeedNo Recovery Time > 500mA (Io)Reverse Recovery Time (trr)0ns
Capacitance @ Vr, F150pF @ 0V, 1MHzMounting TypeSurface Mount
ProductSchottky DiodesPeak Reverse Voltage600 V
Forward Continuous Current4 AMax Surge Current12.5 A
ConfigurationSingleForward Voltage Drop1.9 V
Maximum Reverse Leakage Current200 uAOperating Temperature Range- 55 C to + 175 C
Mounting StyleSMD/SMTTechnologythinQ!™ 2G
V600.0 VIf (typ)4.0 A
Qc (typ)13.0 nCPackageDPAK (TO-252)
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesSDD04S60XT
SP000077602
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
Page 1/10

Download datasheet (2Mb)Embed
Next
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
1)
Correction up to 800W
• No forward recovery
Type
Package
SDP04S60
P-TO220-3
SDD04S60
P-TO252-3
SDT04S60
PG-TO220-2-2.
Maximum Ratings, at T
j
Parameter
Continuous forward current,
RMS forward current,
f=50Hz
Surge non repetitive forward current, sine halfwave
=25°C, t
=10ms
T
C
p
Repetitive peak forward current
=150°C, T
=100°C, D=0.1
T
j
C
Non repetitive peak forward current
=10µs, T
=25°C
t
p
C
2
i
t value,
=25°C, t
=10ms
T
C
p
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation,
=25°C
T
C
Operating and storage temperature
Rev. 2.4
PG-TO220-2-2.
Ordering Code
Q67040-S4369
Q67040-S4368
Q67040-S4445
= 25 °C, unless otherwise specified
Symbol
I
=100°C
T
C
I
I
I
I
V
V
P
T
Page 1
SDP04S60, SDD04S60
thinQ!
SiC Schottky Diode
Product Summary
V
RRM
Q
c
I
F
P-TO252
P-TO220
Marking
Pin 1
Pin 2
D04S60
n.c.
D04S60
n.c.
D04S60
C
Value
4
F
5.6
FRMS
12.5
FSM
18
FRM
40
FMAX
0.78
2
i
dt
600
RRM
600
RSM
36.5
tot
T
-55... +175
j ,
stg
SDT04S60
V
600
13
nC
4
A
Pin 3
C
A
A
C
A
Unit
A
A²s
V
W
°C
2007-09-10

SDD04S60 Summary of contents

  • Page 1

    ... T C Operating and storage temperature Rev. 2.4 PG-TO220-2-2. Ordering Code Q67040-S4369 Q67040-S4368 Q67040-S4445 = 25 °C, unless otherwise specified Symbol I =100° Page 1 SDP04S60, SDD04S60 thinQ! SiC Schottky Diode Product Summary V RRM P-TO252 P-TO220 Marking Pin 1 Pin 2 D04S60 n.c. D04S60 n.c. D04S60 C Value ...

  • Page 2

    ... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.4 Symbol R thJC R thJA R thJA °C, unless otherwise specified j Symbol =100°C, η = 93%, ∆ 30% C Page 2 SDP04S60, SDD04S60 SDT04S60 Values Unit min. typ. max 4.1 K Values Unit min ...

  • Page 3

    ... Switching time =400V, I =4A /dt=200A/µ Total capacitance =0V, T =25°C, f=1MHz =300V, T =25°C, f=1MHz =600V, T =25°C, f=1MHz Rev. 2 °C, unless otherwise specified j Symbol Q c =150° =150° Page 3 SDP04S60, SDD04S60 SDT04S60 Values Unit min. typ. max n. 150 - - 2007-09-10 ...

  • Page 4

    ... Rev. 2.4 2 Diode forward current = parameter: T °C 180 Typ. forward power dissipation vs. average forward current P F(AV 2 Page 4 SDP04S60, SDD04S60 ) C ≤ 175 °C j 4.5 A 3.5 3 2.5 2 1 100 120 140 =100° ...

  • Page 5

    ... Rev. 2.4 6 Transient thermal impedance Z thJC parameter : K 25°C 100°C 10 125°C 150° 400 V 600 Typ. C stored energy E =f(V C µ Page 5 SDP04S60, SDD04S60 = SDP04S60 single pulse - 1.6 1.4 1.2 1 0.8 0.6 0.4 0 100 200 300 400 SDT04S60 D = 0.50 0.20 ...

  • Page 6

    ... Typ. capacitive charge vs. current slope parameter 150 ° *0 100 200 300 400 500 600 700 800 Rev. 2 A/µs 1000 di /dt F Page 6 SDP04S60, SDD04S60 SDT04S60 2007-09-10 ...

  • Page 7

    ... P-TO220-3-1, P-TO220-3-21 Rev. 2.4 SDP04S60, SDD04S60 Page 7 SDT04S60 2007-09-10 ...

  • Page 8

    ... P-TO252-3-1, P-TO252-3-11, P-TO252-3-21 (D-Pak) Rev. 2.4 SDP04S60, SDD04S60 Page 7 SDT04S60 2007-09-10 ...

  • Page 9

    ... PG-TO-220-2-2 Rev. 2.4 SDP04S60, SDD04S60 Page 8 SDT04S60 2007-09-10 ...

  • Page 10

    ... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 SDP04S60, SDD04S60 Page 9 SDT04S60 2007-09-10 ...