SDD04S60 Infineon Technologies, SDD04S60 Datasheet - Page 3

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SDD04S60

Manufacturer Part Number
SDD04S60
Description
DIODE SCHOTTKY 600V 4A D-PAK
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of SDD04S60

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Voltage - Forward (vf) (max) @ If
1.9V @ 4A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
4A (DC)
Current - Reverse Leakage @ Vr
200µA @ 600V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
150pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
4 A
Max Surge Current
12.5 A
Configuration
Single
Forward Voltage Drop
1.9 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
SMD/SMT
Technology
thinQ!™ 2G
V
600.0 V
If (typ)
4.0 A
Qc (typ)
13.0 nC
Package
DPAK (TO-252)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SDD04S60XT
SP000077602

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SDD04S60
Manufacturer:
infineon
Quantity:
10 000
Part Number:
SDD04S60
Manufacturer:
STM
Quantity:
4 944
Part Number:
SDD04S60
Manufacturer:
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Quantity:
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Electrical Characteristics, at T
Parameter
AC Characteristics
Total capacitive charge
V
Switching time
V
Total capacitance
V
V
V
Rev. 2.4
R
R
R
R
R
=400V, I
=400V, I
=0V, T
=300V, T
=600V, T
C
=25°C, f=1MHz
F
F
C
C
=4A, di
=4A, di
=25°C, f=1MHz
=25°C, f=1MHz
F
F
/dt=200A/µs, T
/dt=200A/µs, T
j
j
=150°C
=150°C
j
= 25 °C, unless otherwise specified
Page 3
Symbol
Q
t
C
rr
c
min.
SDP04S60, SDD04S60
-
-
-
-
-
Values
150
typ.
n.a.
13
10
7
max.
SDT04S60
2007-09-10
-
-
-
-
-
Unit
nC
ns
pF

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