SDD04S60 Infineon Technologies, SDD04S60 Datasheet - Page 5

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SDD04S60

Manufacturer Part Number
SDD04S60
Description
DIODE SCHOTTKY 600V 4A D-PAK
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of SDD04S60

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Voltage - Forward (vf) (max) @ If
1.9V @ 4A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
4A (DC)
Current - Reverse Leakage @ Vr
200µA @ 600V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
150pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
4 A
Max Surge Current
12.5 A
Configuration
Single
Forward Voltage Drop
1.9 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
SMD/SMT
Technology
thinQ!™ 2G
V
600.0 V
If (typ)
4.0 A
Qc (typ)
13.0 nC
Package
DPAK (TO-252)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SDD04S60XT
SP000077602

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Manufacturer
Quantity
Price
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5 Typ. reverse current vs. reverse voltage
7 Typ. capacitance vs. reverse voltage
parameter: T
Rev. 2.4
I
C = f (V
R
= f (V
µA
10
10
10
pF
10
10
10
125
75
50
25
-1
-2
-3
100
0
2
1
0
10
R
R
)
)
0
200
C
= 25 °C, f = 1 MHz
10
300
1
400
10
2
V
25°C
100°C
125°C
150°C
V
V
V
R
R
600
10
Page 5
3
6 Transient thermal impedance
Z
parameter : D = t
8 Typ. C stored energy
E
thJC
C
K/W
=f(V
10
10
10
10
10
10
µJ
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= f ( t
-1
-2
-3
-4
2
1
0
1
0
10
0
R
SDP04S60
)
-7
p
10
)
single pulse
100
-6
SDP04S60, SDD04S60
10
p
200
/ T
-5
10
-4
300
10
-3
400
10
SDT04S60
2007-09-10
-2
D = 0.50
V
0.20
0.10
0.05
0.02
0.01
t
V
s
p
R
600
10
0

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