FGA25N120FTD Fairchild Semiconductor, FGA25N120FTD Datasheet
FGA25N120FTD
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FGA25N120FTD Summary of contents
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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FGA25N120FTD Rev. A1 General Description Using advanced field stop trench technology, Fairchild’s 1200V = 25A C trench IGBTs offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche ruggedness ...
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... E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGA25N120FTD Rev. A1 Packaging Package Type Qty per Tube TO-3PN - T = 25°C unless otherwise noted C Test Conditions = 0V 1mA ...
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... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr FGA25N120FTD Rev 25°C unless otherwise noted C Test Conditions 25A 125 125 =25A, dI /dt = 200A/µ 125 125 ...
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... T = 125 Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Common Emitter V = 15V GE 2.7 2.4 2.1 1.8 1.5 I 1.2 0 Collector-EmitterCase Temperature, T FGA25N120FTD Rev. A1 Figure 2. Typical Output Characteristics 180 150 120 12V 90 60 10V [V] CE Figure 4. Transfer Characteristics 120 [V] CE Figure 6 ...
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... 100 Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 500 t r 100 Common Emitter V t d(on Gate Resistance, R FGA25N120FTD Rev. A1 Figure 8. Capacitance Characteristics GE 6000 Common Emitter 125 C C 5000 4000 3000 2000 50A 1000 [V] GE Figure 10. SOA Characteristics 200 100 600V 10 400V 1 0 ...
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... 125 C C 1000 200 Gate Resistance, R Figure 17. Turn off Switching SOA Characteristics 100 10 Safe Operating Area 15V 125 Collector-Emitter Voltage, V FGA25N120FTD Rev. A1 Figure 14. Turn-off Characteristics vs. 1500 1000 d(on) 100 [A] C Figure 16. Switching Loss vs. Collector Current 10000 1000 E off E on 100 100 [ Ω ...
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... Forward Current, I Figure 21. Reverse Recovery Time 1200 1000 di/dt = 100A/ 800 600 400 Forward Current, I Figure 22. Transient Thermal Impedance of IGBT 1 0.1 0.01 1E-3 1E-5 FGA25N120FTD Rev. A1 Figure 20. Stored Charge µ [A] F µ s µ 200A [A] F 0.5 0.2 0.1 0.05 ...
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... Mechanical Dimensions FGA25N120FTD Rev. A1 TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA25N120FTD Rev. A1 FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...