FGA25N120FTD Fairchild Semiconductor, FGA25N120FTD Datasheet

IGBT TRENCH 1200V 50A TO-3P

FGA25N120FTD

Manufacturer Part Number
FGA25N120FTD
Description
IGBT TRENCH 1200V 50A TO-3P
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGA25N120FTD

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
313W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3P-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGA25N120FTD
Manufacturer:
INFINEON
Quantity:
2 000
©2009 Fairchild Semiconductor Corporation
FGA25N120FTD Rev. A1
Absolute Maximum Ratings
Notes:
1: Repetitiverating: Pulse width limited by max. junction temperature
Thermal Characteristics
FGA25N120FTD
1200V, 25A Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V
• High input impedance
• RoHS complaint
Applications
• Induction heating and Microvewave oven
• Soft switching applications
V
V
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(Diode)
Thermal Resistance, Junction to Case
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode continuous Forward current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G C E
CE(sat)
=1.6V @ I
Description
Parameter
TO-3P
C
= 25A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 100
= 100
= 25
= 100
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
o
o
C
C
o
o
o
C
C
C
Typ.
-
-
-
G
-55 to +150
-55 to +150
Ratings
1200
± 25
313
125
300
50
25
75
25
Max.
1.42
0.4
C
E
40
February 2009
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
C
C
C
tm

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FGA25N120FTD Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FGA25N120FTD Rev. A1 General Description Using advanced field stop trench technology, Fairchild’s 1200V = 25A C trench IGBTs offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche ruggedness ...

Page 2

... E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGA25N120FTD Rev. A1 Packaging Package Type Qty per Tube TO-3PN - T = 25°C unless otherwise noted C Test Conditions = 0V 1mA ...

Page 3

... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr FGA25N120FTD Rev 25°C unless otherwise noted C Test Conditions 25A 125 125 =25A, dI /dt = 200A/µ 125 125 ...

Page 4

... T = 125 Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Common Emitter V = 15V GE 2.7 2.4 2.1 1.8 1.5 I 1.2 0 Collector-EmitterCase Temperature, T FGA25N120FTD Rev. A1 Figure 2. Typical Output Characteristics 180 150 120 12V 90 60 10V [V] CE Figure 4. Transfer Characteristics 120 [V] CE Figure 6 ...

Page 5

... 100 Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 500 t r 100 Common Emitter V t d(on Gate Resistance, R FGA25N120FTD Rev. A1 Figure 8. Capacitance Characteristics GE 6000 Common Emitter 125 C C 5000 4000 3000 2000 50A 1000 [V] GE Figure 10. SOA Characteristics 200 100 600V 10 400V 1 0 ...

Page 6

... 125 C C 1000 200 Gate Resistance, R Figure 17. Turn off Switching SOA Characteristics 100 10 Safe Operating Area 15V 125 Collector-Emitter Voltage, V FGA25N120FTD Rev. A1 Figure 14. Turn-off Characteristics vs. 1500 1000 d(on) 100 [A] C Figure 16. Switching Loss vs. Collector Current 10000 1000 E off E on 100 100 [ Ω ...

Page 7

... Forward Current, I Figure 21. Reverse Recovery Time 1200 1000 di/dt = 100A/ 800 600 400 Forward Current, I Figure 22. Transient Thermal Impedance of IGBT 1 0.1 0.01 1E-3 1E-5 FGA25N120FTD Rev. A1 Figure 20. Stored Charge µ [A] F µ s µ 200A [A] F 0.5 0.2 0.1 0.05 ...

Page 8

... Mechanical Dimensions FGA25N120FTD Rev. A1 TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA25N120FTD Rev. A1 FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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