IRG4IBC20FDPBF International Rectifier, IRG4IBC20FDPBF Datasheet

IGBT W/DIODE 600V 14.3A TO220FP

IRG4IBC20FDPBF

Manufacturer Part Number
IRG4IBC20FDPBF
Description
IGBT W/DIODE 600V 14.3A TO220FP
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4IBC20FDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 9A
Current - Collector (ic) (max)
14.3A
Power - Max
34W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
14.3A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
34W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4IBC20FDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4IBC20FDPBF
Manufacturer:
IR
Quantity:
12 500
Features
Benefits
• Simplified assembly
• Highest efficiency and power density
• HEXFRED
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
www.irf.com
• Very Low 1.66V votage drop
• 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink
• Fast: Optimized for medium operating
• IGBT co-packaged with HEXFRED
• Tighter parameter distribution
• Industry standard Isolated TO-220 Fullpak
• Lead-Free
R
R
R
Wt
V
I
I
I
I
I
I
Visol
V
P
P
T
T
switching losses and EMI
C
C
CM
LM
F
FM
kHz in resonant mode).
ultrasoft recovery antiparallel diodes
CES
GE
D
D
J
STG
outline
θJC
θJC
θJA
frequencies ( 1-5 kHz in hard switching, >20
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
antiparallel Diode minimizes
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case…
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Parameter
Parameter
TM
ultrafast,
TM

IRG4IBC20FDPbF
G
n-channel
300 (0.063 in. (1.6mm) from case)
2.0 (0.07)
Typ.
–––
–––
–––
C
E
10 lbf•in (1.1 N•m)
TO-220 FULLP AK
-55 to +150
Max.
2500
14.3
± 20
600
7.7
6.5
64
64
64
34
14
Fast CoPack IGBT
@V
V
CE(on) typ.
GE
Max.
V
–––
3.7
5.1
65
CES
= 15V, I
= 600V
= 1.66V
C
= 9.0A
Units
g (oz)
°C/W
Units
°C
V
A
V
1

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IRG4IBC20FDPBF Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4IBC20FDPbF G TM ultrafast, n-channel TM  300 (0.063 in. (1.6mm) from case) Typ. ––– ––– ––– 2.0 (0.07) Fast CoPack IGBT ...

Page 2

Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ∆ ∆ GE(th) ...

Page 3

Square wave: 60% of rated voltage 4.0 I 2.0 Ideal diodes 0.0 0.1 Fig Typical Load Current vs. Frequency 100 150 20µs ...

Page 4

T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) ...

Page 5

1MHz ies res 800 oes ce gc 600 C ies 400 200 C oes C res ...

Page 6

R = 50Ohm 150 C ° 480V CC 2 15V GE 2.0 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical ...

Page 7

V = 200V 125° 25° 4. 100 di /dt - (A/µs) f Fig Typical Reverse Recovery vs. di 500 V = 200V ...

Page 8

Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. ...

Page 9

Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...

Page 10

TO-220AB Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220AB Full-Pak Part Marking Information TO-220AB Full-Pak package is not recommended for Surface Mount Application. Notes: Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20) GE ...

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