IRG4BC40UPBF International Rectifier, IRG4BC40UPBF Datasheet
IRG4BC40UPBF
Manufacturer Part Number
IRG4BC40UPBF
Description
IGBT UFAST 600V 40A TO220AB
Manufacturer
International Rectifier
Type
Ultrafastr
Specifications of IRG4BC40UPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Capacitance, Gate
2100 pF
Current, Collector
40 A
Energy Rating
15 mJ
Package Type
TO-220AB
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.15 V
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
40A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Dc Collector Current
40A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4BC40UPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Benefits
Features
Features
Thermal Resistance
Features
Features
Features
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
Absolute Maximum Ratings
• UltraFast: optimized for high operating
• Generation 4 IGBT design provides tighter
• Industry standard TO-220AB package
www.irf.com
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
C
C
CM
LM
Generation 3
kHz in resonant mode
parameter distribution and higher efficiency than
J
ARV
STG
CES
GE
D
D
θJC
θCS
θJA
industry-standard Generation 3 IR IGBTs
frequencies 8-40 kHz in hard switching, >200
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
G
n-channel
------
------
------
------
Min.
300 (0.063 in. (1.6mm) from case)
E
C
10 lbf•in (1.1N•m)
-55 to +150
TO-220AB
Max.
2 (0.07)
600
160
160
±20
160
40
20
15
65
Typ.
------
------
0.50
V
@V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
------
------
0.77
80
= 600V
= 1.72V
C
= 20A
4/17/2000
Units
g (oz)
Units
°C/W
mJ
°C
V
A
V
W
1
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IRG4BC40UPBF Summary of contents
Page 1
Features Features Features Features Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard ...
Page 2
Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage ---- /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. ...
Page 3
wave : ...
Page 4
T , Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0.2 ...
Page 5
...
Page 6
R = 10Ω 150° 480V 15V G E 3.0 2.0 1.0 0 Collector-to-Emitter Current (A) C Fig Typical ...
Page 7
L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...
Page 8
(. (. (. (. 6.47 (.255 ) 6.10 (.240 ) (.6 ...
Page 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...