STGW35HF60WD STMicroelectronics, STGW35HF60WD Datasheet

STGW35HF60WD
Manufacturer Part Number	STGW35HF60WD
Description	IGBT 600V 60A 200W TO-247
Manufacturer	STMicroelectronics
STGW35HF60WD datasheets	1. STGW35HF60WD.pdf (12 pages)

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Specifications of STGW35HF60WD
Voltage - Collector Emitter Breakdown (max)	600V	Vce(on) (max) @ Vge, Ic	2.5V @ 15V, 20A
Current - Collector (ic) (max)	60A	Power - Max	200W
Input Type	Standard	Mounting Type	Through Hole
Package / Case	TO-247-3	Channel Type	N
Configuration	Single	Collector-emitter Voltage	600V
Collector Current (dc) (max)	60A	Gate To Emitter Voltage (max)	±20V
Package Type	TO-247	Pin Count	3 +Tab
Mounting	Through Hole	Operating Temperature (max)	150C
Operating Temperature Classification	Military	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Igbt Type	-	Other names	497-10073-5

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Features

■

Improved E

at elevated temperature

off

■

Minimal tail current

■

Low conduction losses

■

classified for easy parallel connection

CE(sat)

■

Ultra fast soft recovery antiparallel diode

Applications

■

Welding

■

High frequency converters

■

Power factor correction

Description

The STGW35HF60WD is based on a new

advanced planar technology concept to yield an

IGBT with more stable switching performance

) versus temperature, as well as lower

off

conduction losses. The device is tailored to high

switching frequency operation (over 100 kHz).

Table 1.

Device summary

Order code

STGW35HF60WD

1. Collector-emitter saturation voltage is classified in group A, B and C, see

STMicroelectronics reserves the right to ship from any group according to production availability.

May 2010

Figure 1.

(1)

Marking

GW35HF60WDA

GW35HF60WDB

GW35HF60WDC

Doc ID 15592 Rev 5

STGW35HF60WD

35 A, 600 V ultra fast IGBT

TO-247

Internal schematic diagram

Package

Packaging

TO-247

Tube

Table 5: VCE(sat)

classification.

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STGW35HF60WD Summary of contents
Page 1 ... Welding ■ High frequency converters ■ Power factor correction Description The STGW35HF60WD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (E ) versus temperature, as well as lower off conduction losses. The device is tailored to high switching frequency operation (over 100 kHz). ... Page 2 ... Parameter = ° 100 ° ° sinusoidal ° max ( ) = ------------------------------------------------------------------------------------------------------- × – max thj c CE sat = 10 Ω 150 °C CES Parameter Doc ID 15592 Rev 5 STGW35HF60WD Value 600 60 35 150 80 ± 120 200 – 150 – max C C Value 0.63 1.5 50 Unit ° ... Page 3 ... STGW35HF60WD 2 Electrical characteristics ( °C unless otherwise specified) J Table 4. Static Symbol Collector-emitter breakdown voltage V (BR)CES (V GE Collector-emitter V CE(sat) saturation voltage V Gate threshold voltage GE(th) Collector cut-off current I CES (V GE Gate-emitter leakage I GES current (V Table 5. V CE(sat) Symbol Collector-emitter saturation voltage V CE(sat Table 6. ... Page 4 ... V = 400 Ω (see Figure V = 400 Ω 125 °C (see T J Parameter Test conditions A di/dt = 100 A/µs (see Figure A =125 °C, di/dt = 100 A/µs J (see Figure Doc ID 15592 Rev 5 STGW35HF60WD Min. Typ 16) 1650 = Figure 16) 1600 = 175 225 70 16) Min. Typ 290 ... Page 5 ... STGW35HF60WD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics 200 I ( 150 100 Figure 4. Normalized V CE(sat) 1.6 V CE(sat) (norm) 1 -50 º ºC J 1.2 1 0 Figure 6. Normalized breakdown voltage vs. temperature 1.1 V CES (norm) 1. 0.95 0.9 - Figure 3. 200 I ( 150 9 V 100 ( vs. I Figure 5. C 1.6 ... Page 6 ... Figure 11. Switching losses vs. gate E (µJ) 2000 1500 E OFF 1000 = 15 V 500 GE =10 Ω G 100 T 125 (°C) J Figure 13. Turn-off SOA 1000 OFF = 125 ° (A) C Doc ID 15592 Rev 5 STGW35HF60WD Capacitance variations MHz oes C res resistance E OFF V = 400 125 ° 120 180 (A) 100 ... Page 7 ... STGW35HF60WD Figure 14. Diode forward on voltage Figure 15. Thermal impedance Doc ID 15592 Rev 5 Electrical characteristics 7/12 ... Page 8 ... Figure 16. Test circuit for inductive load switching Figure 18. Switching waveform Td(off) Td(on) Tr(Ion) Ton 8/12 Figure 17. Gate charge test circuit AM01504v1 Figure 19. Diode recovery time waveform 90% 10 90% 10% Tr(Voff) Tcross 90% 10% Tf Toff AM01506v1 Doc ID 15592 Rev 5 STGW35HF60WD Q di/ RRM RRM V di/dt AM01505v1 AM01507v1 ... Page 9 ... STGW35HF60WD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 15592 Rev 5 Package mechanical data ® 9/12 ... Page 10 ... L1 L2 øP øR S 10/12 TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 15592 Rev 5 STGW35HF60WD Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ... Page 11 ... STGW35HF60WD 5 Revision history Table 10. Document revision history Date 14-Apr-2009 03-Aug-2009 02-Sep-2009 30-Sep-2009 10-May-2010 Revision 1 Initial release. Inserted dynamic parameters on 2 Document status promoted from preliminary data to datasheet Minor text changes throughout the document 3 Removed watermark Inserted V grouping A, B and C (see CE(sat) ... Page 12 ... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 15592 Rev 5 STGW35HF60WD ...

STGW35HF60WD Summary of contents

Page 1
... Welding ■ High frequency converters ■ Power factor correction Description The STGW35HF60WD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (E ) versus temperature, as well as lower off conduction losses. The device is tailored to high switching frequency operation (over 100 kHz). ...
Page 2
... Parameter = ° 100 ° ° sinusoidal ° max ( ) = ------------------------------------------------------------------------------------------------------- × – max thj c CE sat = 10 Ω 150 °C CES Parameter Doc ID 15592 Rev 5 STGW35HF60WD Value 600 60 35 150 80 ± 120 200 – 150 – max C C Value 0.63 1.5 50 Unit ° ...
Page 3
... STGW35HF60WD 2 Electrical characteristics ( °C unless otherwise specified) J Table 4. Static Symbol Collector-emitter breakdown voltage V (BR)CES (V GE Collector-emitter V CE(sat) saturation voltage V Gate threshold voltage GE(th) Collector cut-off current I CES (V GE Gate-emitter leakage I GES current (V Table 5. V CE(sat) Symbol Collector-emitter saturation voltage V CE(sat Table 6. ...
Page 4
... V = 400 Ω (see Figure V = 400 Ω 125 °C (see T J Parameter Test conditions A di/dt = 100 A/µs (see Figure A =125 °C, di/dt = 100 A/µs J (see Figure Doc ID 15592 Rev 5 STGW35HF60WD Min. Typ 16) 1650 = Figure 16) 1600 = 175 225 70 16) Min. Typ 290 ...
Page 5
... STGW35HF60WD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics 200 I ( 150 100 Figure 4. Normalized V CE(sat) 1.6 V CE(sat) (norm) 1 -50 º ºC J 1.2 1 0 Figure 6. Normalized breakdown voltage vs. temperature 1.1 V CES (norm) 1. 0.95 0.9 - Figure 3. 200 I ( 150 9 V 100 ( vs. I Figure 5. C 1.6 ...
Page 6
... Figure 11. Switching losses vs. gate E (µJ) 2000 1500 E OFF 1000 = 15 V 500 GE =10 Ω G 100 T 125 (°C) J Figure 13. Turn-off SOA 1000 OFF = 125 ° (A) C Doc ID 15592 Rev 5 STGW35HF60WD Capacitance variations MHz oes C res resistance E OFF V = 400 125 ° 120 180 (A) 100 ...
Page 7
... STGW35HF60WD Figure 14. Diode forward on voltage Figure 15. Thermal impedance Doc ID 15592 Rev 5 Electrical characteristics 7/12 ...
Page 8
... Figure 16. Test circuit for inductive load switching Figure 18. Switching waveform Td(off) Td(on) Tr(Ion) Ton 8/12 Figure 17. Gate charge test circuit AM01504v1 Figure 19. Diode recovery time waveform 90% 10 90% 10% Tr(Voff) Tcross 90% 10% Tf Toff AM01506v1 Doc ID 15592 Rev 5 STGW35HF60WD Q di/ RRM RRM V di/dt AM01505v1 AM01507v1 ...
Page 9
... STGW35HF60WD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 15592 Rev 5 Package mechanical data ® 9/12 ...
Page 10
... L1 L2 øP øR S 10/12 TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 15592 Rev 5 STGW35HF60WD Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...
Page 11
... STGW35HF60WD 5 Revision history Table 10. Document revision history Date 14-Apr-2009 03-Aug-2009 02-Sep-2009 30-Sep-2009 10-May-2010 Revision 1 Initial release. Inserted dynamic parameters on 2 Document status promoted from preliminary data to datasheet Minor text changes throughout the document 3 Removed watermark Inserted V grouping A, B and C (see CE(sat) ...
Page 12
... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 15592 Rev 5 STGW35HF60WD ...

STGW35HF60WD

STGW35HF60WD

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Specifications of STGW35HF60WD

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