IGBT UFAST 1200V 30A TO247AC

IRG4PH40UPBF

Manufacturer Part NumberIRG4PH40UPBF
DescriptionIGBT UFAST 1200V 30A TO247AC
ManufacturerInternational Rectifier
TypeUltrafast
IRG4PH40UPBF datasheets
 


Specifications of IRG4PH40UPBF

Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.1V @ 15V, 21A
Current - Collector (ic) (max)41APower - Max160W
Input TypeStandardMounting TypeThrough Hole
Package / CaseTO-247-3 (Straight Leads), TO-247ACCapacitance, Gate1800 pF
Current, Collector41 AEnergy Rating270 mJ
Package TypeTO-247ACPolarityN-Channel
Power Dissipation160 WResistance, Thermal, Junction To Case0.77 °C/W
Speed, Switching40 kHz (Hard Switching), >200 kHz (Resonant Mode)Transistor TypeNPN
Voltage, Collector To Emitter Shorted1200 VVoltage, Collector To Emitter, Saturation2.97 V
Dc Collector Current41ACollector Emitter Voltage Vces1.2kV
Power Dissipation Pd160WCollector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Range-55°C To +150°CRohs CompliantYes
Channel TypeNConfigurationSingle
Collector-emitter Voltage1.2kVCollector Current (dc) (max)41A
Gate To Emitter Voltage (max)±20VPin Count3 +Tab
MountingThrough HoleOperating Temperature (min)-55C
Operating Temperature (max)150COperating Temperature ClassificationMilitary
Lead Free Status / RoHS StatusLead free / RoHS CompliantIgbt Type-
Other names*IRG4PH40UPBF  
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INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• Optimized for power conversion; SMPS, UPS
and welding
• Industry standard TO-247AC package
• Lead-Free
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• Much lower conduction losses than MOSFETs
• More efficient than short circuit rated IGBTs
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Breakdown Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
Pulsed Collector Current Q
I
CM
Clamped Inductive Load Current R
I
LM
V
Gate-to-Emitter Voltage
GE
E
Reverse Voltage Avalanche Energy S
ARV
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
R
Junction-to-Ambient, typical socket mount
θJA
Wt
Weight
www.irf.com
IRG4PH40UPbF
Ultra Fast Speed IGBT
C
V
CES
V
CE(on) typ.
G
@V
= 15V, I
E
GE
n-channel
TO-247AC
Max.
1200
41
21
82
82
± 20
270
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Typ.
Max.
–––
0.77
0.24
–––
–––
40
6 (0.21)
–––
PD - 95187
= 1200V
= 2.43V
= 21A
C
Units
V
A
V
mJ
W
°C
Units
°C/W
g (oz)
1
04/26/04

IRG4PH40UPBF Summary of contents

  • Page 1

    ... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PH40UPbF Ultra Fast Speed IGBT C V CES V CE(on) typ 15V n-channel TO-247AC Max. 1200 41 21 ...

  • Page 2

    ... IRG4PH40UPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage T (BR)ECS Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance Zero Gate Voltage Collector Current ...

  • Page 3

    ... Fig Typical Output Characteristics www.irf.com uty c yc le: 50 125° 90°C s ink G ate driv e as spec ified tio Frequency (kHz) (Load Current = I of fundamental) RMS 100  T = 150 15V Fig Typical Transfer Characteristics IRG4PH40UPbF T ria 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

  • Page 4

    ... IRG4PH40UPbF 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02  SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V PULSE WIDTH 3.0 2.0 1.0 125 150 -60 -40 -20 ° ...

  • Page 5

    ... G G Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs.  100 0.1 -60 -40 - Fig Typical Switching Losses vs. IRG4PH40UPbF = 400V = 21A Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω Ohm = 15V = 960V  10 100 120 140 160 ° Junction Temperature ( C ) ...

  • Page 6

    ... IRG4PH40UPbF 25.0  Ω Ohm 150 C ° 960V 15V 20.0 GE 15.0 10.0 5.0 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000  V = 20V 125 C J 100 10  SAFE OPERATING AREA Fig Turn-Off SOA o 10 100 1000 10000 , Collector-to-Emitter Voltage (V) www.irf.com ...

  • Page 7

    ... Load Test Circuit 50V 1000V www.irf.com 960V .T. D river ff t=5µ IRG4PH40UPbF 960V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 960V Fig. 14b - Switching Loss Waveforms 7 ...

  • Page 8

    ... IRG4PH40UPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

  • Page 9

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...