IRG4PH40UPBF International Rectifier, IRG4PH40UPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PH40UPBF
• Description: IGBT UFAST 1200V 30A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PH40UPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 21A
• Current - Collector (ic) (max): 41A
• Power - Max: 160W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 1800 pF
• Current, Collector: 41 A
• Energy Rating: 270 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 160 W
• Resistance, Thermal, Junction To Case: 0.77 °C/W
• Speed, Switching: 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 2.97 V
• Dc Collector Current: 41A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 160W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 41A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PH40UPBF

IRG4PH40UPbF
Notes:
Q
R
S
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
∆V
V
V
∆V
g
I
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
fe
E
(BR)CES
(BR)ECS
CE(ON)
GE(th)
on
off
ts
ts
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
CC
/∆T
= 80%(V
/∆T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 10Ω,
Min. Typ. Max. Units
1200
Min. Typ. Max. Units
3.0
18
16
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—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
T
U
1800
1.04
3.40
4.44
7.39
0.43
2.43
2.97
2.47
220
180
310
380
120
-11
24
—
86
13
29
24
24
24
25
13
18
—
—
—
—
—
—
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
5000
±100
250
130
330
270
3.1
6.0
2.0
5.2
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—
—
—
—
—
—
20
44
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
mJ
mJ
µA
nA
nC
ns
nH
ns
pF
V
V
V
S
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9, 10, 14
T
I
V
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
V
V
ƒ = 1.0MHz
C
C
C
I
I
I
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
J
J
CC
GE
GE
GE
GE
CC
C
C
C
= 21A
= 21A, V
= 21A, V
= 25°C
= 150°C,
= 21A
= 41A
= 21A , T
= 100V, I
= 0V, I
= 0V, I
= 0V, I
= V
= V
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CE
CE
CE
CC
CC
C
C
J
= 250µA
= 1.0A
= 1.0mA
C
= 250µA
= 250µA
= 150°C
G
G
= 1200V
= 10V, T
= 1200V, T
= 960V
= 960V
= 21A
= 10Ω
= 10Ω
See Fig. 8
See Fig. 7
J
www.irf.com
= 25°C
V
See Fig.2, 5
J
GE
= 150°C
= 15V