IRG4PH40UPBF International Rectifier, IRG4PH40UPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4PH40UPBF
• Description: IGBT UFAST 1200V 30A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PH40UPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 21A
• Current - Collector (ic) (max): 41A
• Power - Max: 160W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 1800 pF
• Current, Collector: 41 A
• Energy Rating: 270 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 160 W
• Resistance, Thermal, Junction To Case: 0.77 °C/W
• Speed, Switching: 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 2.97 V
• Dc Collector Current: 41A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 160W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 41A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PH40UPBF

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Fig. 9 - Typical Switching Losses vs. Gate
5.0
4.8
4.6
4.4
4.2
4.0
4000
3000
2000
1000
0
0

Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 960V
= 25 C
= 15V
= 21A
R
V
10
G
CE
R
°

, Gate Resistance (Ohm)
G
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
, Gate Resistance ( Ω )

C res
C ies
C oes
=
=
=
=


20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
50
100
100
0.1
10
20
16
12
1
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0


R
V
V
V
I
GE
CC
Fig. 8 - Typical Gate Charge vs.
G
CC
C
= 15V
= 960V
= Ohm
= 400V
= 21A
IRG4PH40UPbF
Gate-to-Emitter Voltage
10
T , Junction Temperature ( C )
Junction Temperature
20
Q , Total Gate Charge (nC)
J
Ω
G
0
20
40
40
60
60
80 100 120 140 160

I =

I =

I =
C
C
C
80
°
10.5
42
21
A
A
A
5
100