IRG4PC30UDPBF International Rectifier, IRG4PC30UDPBF Datasheet

IGBT W/DIODE 600V 23A TO247AC

IRG4PC30UDPBF

Manufacturer Part Number
IRG4PC30UDPBF
Description
IGBT W/DIODE 600V 23A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr

Specifications of IRG4PC30UDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 12A
Current - Collector (ic) (max)
23A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Capacitance, Gate
1100 pF
Current, Collector
23 A
Energy Rating
0.54 mJ
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
100 W
Resistance, Thermal, Junction To Case
1.2 °C/W
Speed, Switching
8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.52 V
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
23A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Dc Collector Current
23A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Current Rating
23A
Rohs Compliant
Yes
Transistor Type
IGBT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
*IRG4PC30UDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PC30UDPBF
Manufacturer:
IR
Quantity:
20 000
Features
www.irf.com
θ
θ
θ
θ

G
n-channel
C
E
TO-247AC
CE(on) typ.
GE
CES
=
C
1

Related parts for IRG4PC30UDPBF

IRG4PC30UDPBF Summary of contents

Page 1

Features θ θ θ θ www.irf.com n-channel  ‚ CES = CE(on) typ TO-247AC 1 ...

Page 2

J ∆ ∆ ƒ „ J Ω Ω www.irf.com ...

Page 3

T = 25° 20µs PULSE WIDTH 0.1 0 Collector-to-Emitter Voltage (V) CE www.irf.com 1 f, Frequency (kHz) RMS 100 T ...

Page 4

T , Case Temperature (° 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 3 15V V ...

Page 5

1MHz ies res 1600 oes ies 1200 C oes 800 C res ...

Page 6

150° 480V 15V 1.6 GE 1.2 0.8 0.4 0 Collector-to-Emitter Current (A) C 100 10 1 0.4 6 1000 V = ...

Page 7

V = 200V 125° 25°C J 120 I = 24A 12A 6. 100 di /dt - (A/µs) f 600 V = 200V R T ...

Page 8

Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on d(on +Vge 10% ...

Page 9

Figure 18e. L 1000V 50V 6000µF 100V Figure 19. www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT D.U. Figure 20 ...

Page 10

Notes:  GE ‚ CC CES G E ≤ ≤ ƒ „ EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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