IGBT W/DIODE 600V 23A TO247AC

IRG4PC30UDPBF

Manufacturer Part NumberIRG4PC30UDPBF
DescriptionIGBT W/DIODE 600V 23A TO247AC
ManufacturerInternational Rectifier
TypeUltrafast
IRG4PC30UDPBF datasheets
 


Specifications of IRG4PC30UDPBF

Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.1V @ 15V, 12A
Current - Collector (ic) (max)23APower - Max100W
Input TypeStandardMounting TypeThrough Hole
Package / CaseTO-247-3 (Straight Leads), TO-247ACCapacitance, Gate1100 pF
Current, Collector23 AEnergy Rating0.54 mJ
Package TypeTO-247ACPolarityN-Channel
Power Dissipation100 WResistance, Thermal, Junction To Case1.2 °C/W
Speed, Switching8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)Voltage, Collector To Emitter Shorted600 V
Voltage, Collector To Emitter, Saturation2.52 VChannel TypeN
ConfigurationSingleCollector-emitter Voltage600V
Collector Current (dc) (max)23AGate To Emitter Voltage (max)±20V
Pin Count3 +TabMountingThrough Hole
Operating Temperature (min)-55COperating Temperature (max)150C
Operating Temperature ClassificationMilitaryDc Collector Current23A
Collector Emitter Voltage Vces600VPower Dissipation Pd100W
Collector Emitter Voltage V(br)ceo600VOperating Temperature Range-55°C To +150°C
No. Of Pins3Current Rating23A
Rohs CompliantYesTransistor TypeIGBT
Lead Free Status / RoHS StatusLead free / RoHS CompliantIgbt Type-
Other names*IRG4PC30UDPBF  
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Features
θ
θ
θ
θ
www.irf.com
C
G
E
n-channel

CES
=
CE(on) typ.
GE
C
TO-247AC
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IRG4PC30UDPBF Summary of contents

  • Page 1

    Features θ θ θ θ www.irf.com n-channel  ‚ CES = CE(on) typ TO-247AC 1 ...

  • Page 2

    J ∆ ∆ ƒ „ J Ω Ω www.irf.com ...

  • Page 3

    T = 25° 20µs PULSE WIDTH 0.1 0 Collector-to-Emitter Voltage (V) CE www.irf.com 1 f, Frequency (kHz) RMS 100 T ...

  • Page 4

    T , Case Temperature (° 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 3 15V V ...

  • Page 5

    1MHz ies res 1600 oes ies 1200 C oes 800 C res ...

  • Page 6

    150° 480V 15V 1.6 GE 1.2 0.8 0.4 0 Collector-to-Emitter Current (A) C 100 10 1 0.4 6 1000 V = ...

  • Page 7

    V = 200V 125° 25°C J 120 I = 24A 12A 6. 100 di /dt - (A/µs) f 600 V = 200V R T ...

  • Page 8

    Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on d(on +Vge 10% ...

  • Page 9

    Figure 18e. L 1000V 50V 6000µF 100V Figure 19. www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT D.U. Figure 20 ...

  • Page 10

    Notes:  GE ‚ CC CES G E ≤ ≤ ƒ „ EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line ...

  • Page 11

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...