IRG7PH42UDPBF International Rectifier, IRG7PH42UDPBF Datasheet

IGBT 1200V 85A W/DIODE TO-247AC

IRG7PH42UDPBF

Manufacturer Part Number
IRG7PH42UDPBF
Description
IGBT 1200V 85A W/DIODE TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7PH42UDPBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 30A
Current - Collector (ic) (max)
85A
Power - Max
320W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Type
IGBT
Dc Collector Current
85A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
320W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Rohs Compliant
Yes
Package
TO-247
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
85
Ic @ 100c (a)
45
Vce(on)@25c Typ (v)
1.70
Vce(on)@25c Max (v)
2.00
Ets Typ (mj)
3.29
Ets Max (mj)
3.8
Vf Typ
2.00
Pd @25c (w)
320
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG7PH42UDPBF
Manufacturer:
INTEL
Quantity:
1 430
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
1
Features
• Low V
• Low switching losses
• Square RBSOA
• 100% of the parts tested for I
• Positive V
• Ultra fast soft recovery co-pak diode
• Tight parameter distribution
• Lead-Free
V
I
I
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Applications
• U.P.S.
• Welding
• Solar Inverter
• Induction Heating
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
NOMINAL
CM
LM
F
F
FM
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
low V
@ T
@ T
@ T
@ T
@ T
@ T
(IGBT)
(Diode)
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
CE (ON)
= 25°C
= 100°C
CE (ON)
CE (ON)
and low switching losses
trench IGBT technology
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
temperature co-efficient
LM

GE
Parameter
Parameter
= 15V
d
GE
= 20V
c
G
f
f
n-channel
IRG7PH42UDPbF
Gate
C
E
G
C
TO-247AC
IRG7PH42UDPbF
Min.
IRG7PH42UD-EP
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
–––
G C
10 lbf·in (1.1 N·m)
E
Collector
-55 to +150
C
Max.
1200
Typ.
0.24
120
120
±30
320
130
–––
–––
85
45
30
90
85
45
40
I
C
V
IRG7PH42UD-EP
T
CE(on)
= 45A, T
V
J(max)
C
TO-247AD
CES
Max.
typ. = 1.7V
= 1200V
Emitter
0.39
0.56
–––
–––
= 150°C
G C
C
E
= 100°C
www.irf.com
E
Units
Units
10/26/09
°C/W
°C
W
V
A
V

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IRG7PH42UDPBF Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θ n-channel IRG7PH42UDPbF G Gate Parameter = 15V 20V GE d Parameter f f IRG7PH42UDPbF IRG7PH42UD- 1200V CES I = 45A 100° 150°C J(max) V typ. = 1.7V CE(on TO-247AC TO-247AD IRG7PH42UD-EP C ...

Page 2

... IRG7PH42UDPbF/IRG7PH42UD-EP Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... 25° 150°C Single Pulse 0 100 V CE (V) Fig Forward SOA ≤ 25°C, T 150° www.irf.com IRG7PH42UDPbF/IRG7PH42UD- Frequency ( kHz ) Fig Typical Load Current vs. Frequency (Load Current = I of fundamental) RMS 350 300 250 200 150 100 125 150 175 1000 100 10µsec 100µsec ...

Page 4

... IRG7PH42UDPbF/IRG7PH42UD-EP 120 100 (V) Fig Typ. IGBT Output Characteristics T = -40° 80µs J 120 100 (V) Fig Typ. IGBT Output Characteristics T = 150° 80µ 15A 30A 60A (V) Fig Typical -40° 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8. 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8 ...

Page 5

... Fig Typ. Energy Loss vs 150° 200µ 600V 6000 5000 E ON 4000 3000 2000 1000 (Ω) Fig Typ. Energy Loss vs 150° 200µ 600V www.irf.com IRG7PH42UDPbF/IRG7PH42UD- vs OFF 10Ω 15V T = 150° 200µ 10000 E OFF 60 80 100 150° 200µ 30A ...

Page 6

... IRG7PH42UDPbF/IRG7PH42UD- 5.0Ω 10Ω (A) Fig Typ. Diode 150° 200 400 600 di F /dt (A/µs) Fig Typ. Diode 600V 15V 47Ω 100Ω vs 9000 8000 7000 6000 5000 4000 3000 2000 800 1000 1200 vs 30A 150°C J 3500 5.0 Ω ...

Page 7

... Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com IRG7PH42UDPbF/IRG7PH42UD- 400 500 600 Fig Typical Gate Charge vs τ ...

Page 8

... IRG7PH42UDPbF/IRG7PH42UD-EP DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT L -5V DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit VCC VCC C force 100K D1 22K DUT G force E force Fig.C.T.5 - BVCES Filter Circuit DUT VCC Rg Fig.C.T.2 - RBSOA Circuit R = VCC ICM DUT Rg Fig.C.T.4 - Resistive Load Circuit C sense 0.0075µ ...

Page 9

... I CE 400 300 200 100 0 Eof f Loss -100 -0.5 0 0.5 1 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 150°C using Fig. CT.4 J www.irf.com IRG7PH42UDPbF/IRG7PH42UD-EP 90 900 80 800 70 700 60 600 50 500 40 400 30 300 20 200 10 100 0 -10 -100 1.5 2 Fig. WF2 - Typ. Turn-on Loss Waveform ...

Page 10

... IRG7PH42UDPbF/IRG7PH42UD-EP TO-247AC package is not recommended for Surface Mount Application. 10 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & www.irf.com ...

Page 11

... TO-247AD package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRG7PH42UDPbF/IRG7PH42UD-EP $% Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. ...

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