APT80GA90B Microsemi Power Products Group, APT80GA90B Datasheet

APT80GA90B

Manufacturer Part Number

APT80GA90B

Description

IGBT 900V 145A 625W TO247

Manufacturer

Microsemi Power Products Group

Datasheet

1.APT80GA90B.pdf (6 pages)

Specifications of APT80GA90B

Igbt Type

Voltage - Collector Emitter Breakdown (max)

900V

Vce(on) (max) @ Vge, Ic

3.1V @ 15V, 47A

Current - Collector (ic) (max)

145A

Power - Max

625W

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-247

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

APT80GA90BMI
APT80GA90BMI

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT80GA90B

Manufacturer:

Microsemi Power Products Group

Quantity:

135

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT80GA90B

Manufacturer:

IXYS

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT80GA90B2D40

Manufacturer:

APT

Quantity:

6 000

Current page: 1 of 6
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Static Characteristics

Thermal and Mechanical Characteristics

Absolute Maximum Ratings

POWER MOS 8

through leading technology silicon design and lifetime control processes. A reduced E

gate charge and a greatly reduced ratio of C

delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the

poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even

when switching at high frequency.

Symbol

CE(ON)

FEATURES

Torque

SSOA

• Fast switching with low EMI

• Very Low E

• Ultra low C

• Low conduction loss

• Low gate charge

• Increased intrinsic gate resistance for low EMI

• RoHS compliant

, T

BR(CES)

CE(on)

GE(th)

CES

GES

ces

θJC

STG

tradeoff results in superior efﬁ ciency compared to other IGBT technologies. Low

Parameter

Collector Emitter Voltage

Continuous Collector Current @ T

Pulsed Collector Current

Gate-Emitter Voltage

Total Power Dissipation @ T

Switching Safe Operating Area @ T

Operating and Storage Junction Temperature Range

Lead Temperature for Soldering: 0.063" from Case for 10 Seconds

Parameter

Collector-Emitter Breakdown Voltage

Collector-Emitter On Voltage

Gate Emitter Threshold Voltage

Zero Gate Voltage Collector Current

Gate-Emitter Leakage Current

Characteristic

Junction to Case Thermal Resistance

Package Weight

Mounting Torque (TO-247 Package), 4-40 or M3 screw

res

off

is a high speed Punch-Through switch-mode IGBT. Low E

for maximum efﬁ ciency

for improved noise immunity

High Speed PT IGBT

= 25°C

Microsemi Website - http://www.microsemi.com

= 25°C

= 100°C

res

= 150°C

ies

provide excellent noise immunity, short

= 25°C unless otherwise speciﬁ ed

Test Conditions

= 47A

= 900V,

= 15V,

= 0V

= 0V, I

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• High power PFC boost

• Welding

• UPS, solar, and other inverters

• High frequency, high efﬁ ciency industrial

= ±30V

, I

= 1.0mA

= 1mA

off

= 25°C

= 125°C

= 25°C

= 125°C

is achieved

off

Min

900

Min

APT80GA90B

Single die IGBT

239A @ 900V

-55 to 150

Ratings

Typ

900

145

239

±30

625

300

2.5

2.2

4.5

APT80GA90B

5.9

APT80GA90S

Max

1000

±100

250

0.2

3.1

APT80GA90S

PAK

900V

°C/W

Unit

in·lbf

Unit

°C

μA

Related parts for APT80GA90B

APT80GA90B Summary of contents

Page 1

... 47A 1mA 900V ±30V GS Microsemi Website - http://www.microsemi.com APT80GA90B APT80GA90S APT80GA90S is achieved off - D off APT80GA90B Single die IGBT Ratings 900 145 80 239 ±30 625 239A @ 900V -55 to 150 300 Min Typ Max 900 T = 25°C 2.5 3 125° 25°C ...

Page 2

... L= 100uH 900V CE Inductive Switching (25° 600V 15V 47A 4.7Ω +25°C J Inductive Switching (125° 600V 15V 47A 4.7Ω +125°C J APT80GA90B_S Min Typ Max Unit 4560 411 pF 62 200 239 149 85 1652 μJ 1389 192 128 2813 μJ 2082 ...

Page 3

... JUNCTION TEMPERATURE J FIGURE 7, Threshold Voltage vs Junction Temperature T = 125° 150° 25° 25°C. J 250μs PULSE TEST <0.5 % DUTY CYCLE 100 125 150 APT80GA90B_S 350 13V 15V 300 10V 250 9V 200 8V 150 7V 100 COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics (T = 25°C) J ...

Page 4

... FIGURE 14, Turn-Off Energy Loss vs Collector Current 7000 94A 6000 on2, 5000 E 94A off, 4000 3000 2000 E 23.5A on2, 1000 E 23.5A off FIGURE 16, Switching Energy Losses vs Junction Temperature APT80GA90B_S V =15V,T =125° =15V,T =25° 600V 4.7Ω 100μ COLLECTOR-TO-EMITTER CURRENT (A) ...

Page 5

... FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 1000 C ies 100 10 C oes C res 0.1 600 800 FIGURE 18, Minimum Switching Safe Operating Area SINGLE PULSE RECTANGULAR PULSE DURATION (SECONDS) T (°C) C .1508 .3886 APT80GA90B_S 100 1000 V , COLLECTOR-TO-EMITTER VOLTAGE CE Note Duty Factor Peak θ 0.1 1 ...

Page 6

... Gate Collector Emitter APT80GA90B_S 10% Gate Voltage t d(on Switching Energy D 3 PAK Package Outline 15.95 (.628) 13 ...

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