IRG4BC15UDPBF International Rectifier, IRG4BC15UDPBF Datasheet
IRG4BC15UDPBF
Specifications of IRG4BC15UDPBF
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IRG4BC15UDPBF Summary of contents
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... Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4BC15UDPbF UltraFast CoPack IGBT C V CES V CE(on) typ 15V n-channel TO-220AB Max. 600 14 7 ...
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Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ 600 (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– ∆ ...
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Ideal diodes 2 0 0.1 100 150 C ° 15V GE 20µs PULSE WIDTH 0.1 0 Collector-to-Emitter ...
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T , Case Temperature ( 0.50 1 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 ...
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1MHz ies res oes ce gc 600 C ies 400 C oes 200 C res ...
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Ω 150° 15V 1 480V 1.2 0.8 0.4 0 Collector Current (A) 100 10 1 0.1 0.0 100 ...
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V = 200V 125° 25° 100 di /dt - (A/µs) f 200 V = 200V 125° 25°C J 160 I ...
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Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on) Eon = d(on) r ...
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Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...
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Notes: Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE ‚V =80%( =20V, L=10µ CES GE ƒPulse width ≤ 80µs; duty factor ≤ 0.1%. „Pulse width 5.0µs, single shot. 10.54 (.415) 3.78 (.149) ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...