IRG4BC30FD1PBF International Rectifier, IRG4BC30FD1PBF Datasheet
IRG4BC30FD1PBF
Specifications of IRG4BC30FD1PBF
Related parts for IRG4BC30FD1PBF
IRG4BC30FD1PBF Summary of contents
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... R Junction-to-Case- Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4BC30FD1PbF G n-channel Parameter d 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– ––– ––– ––– ...
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... IRG4BC30FD1PbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... T = 25°C J 100 T = 150° 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE www.irf.com IRG4BC30FD1PbF RMS 1000 100 10 = 15V 150° 25° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...
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... IRG4BC30FD1PbF 100 T , Case Temperature (° 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 2 15V V = 15V GE GE 80µs PULSE WIDTH 2.0 1.5 1.0 125 150 -60 -40 0.001 0. Rectangular Pulse Duration (sec 34A 17A 8.5A C -20 ...
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... Cies 1200 1000 800 Coes 600 400 Cres 200 Collector-toEmitter-Voltage(V) 2000 480V 15V 25°C 1900 17A 1800 1700 1600 Gate Resistance (Ω) www.irf.com IRG4BC30FD1PbF 100 1000 9000 22Ω 8000 15V 480V 7000 6000 5000 4000 3000 2000 1000 0 -60 -40 - 400V ...
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... IRG4BC30FD1PbF 8000 22Ω 150°C 7000 480V 6000 15V 5000 4000 3000 2000 1000 Collecto-to-Emitter (A) 6 1000 V = 20V 125°C J 100 100 175˚ 150˚ 25˚ 0 SAFE OPERATING AREA 10 100 1000 , Collector-to-Emitter Voltage (V) 4 www.irf.com ...
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... 25°C _____ 900 T = 125°C ---------- J 800 700 600 500 400 300 200 100 0 100 200 300 400 500 600 700 800 900 1000 di F /dt (A/µs) www.irf.com IRG4BC30FD1PbF 125°C ---------- 100 200 300 400 500 600 700 800 900 1000 f 1400 16A R ...
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... IRG4BC30FD1PbF 430µF 80% of Vce LM on off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on d(on) 8 Same type device as +Vge D.U.T. D.U.T. 10% Vce Ic td(off) r d(off 10% Vcc DUT VOLTAGE AND CURRENT Vpk Ipk Ic t2 Eon = Vce DIODE REVERSE t2 RECOVERY ENERGY ...
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... Fig.18e - Macro Waveforms for L 1000V 50V 6000µF 100V Fig Clamped Inductive Load Test Circuit www.irf.com IRG4BC30FD1PbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. VCC Fig Pulsed Collector Current Test Circuit VCC ICM 480µF ...
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... IRG4BC30FD1PbF Y6HQG ) UCDTÃDTÃ6IÃDSA Ã GPUÃ8P9 Ã &'( 6TT H7G 9ÃPIÃXXÃ (Ã ((& DIÃUC Ã6TT H7G`ÃGDI ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" Notes: GE ‚ CES GE ≤ ƒ „ … Energy losses include "tail" and diode reverse recovery, using Diode FD100H06A5. ...