IRG4PH40UD2-EP International Rectifier, IRG4PH40UD2-EP Datasheet

IGBT W/DIODE 1200V 41A TO247AD

IRG4PH40UD2-EP

Manufacturer Part Number
IRG4PH40UD2-EP
Description
IGBT W/DIODE 1200V 41A TO247AD
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PH40UD2-EP

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 21A
Current - Collector (ic) (max)
41A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4PH40UD2-EP

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH40UD2-EP
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4PH40UD2-EPBF
Manufacturer:
IR
Quantity:
6 700
Features
V
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Wt
www.irf.com
Absolute Maximum Ratings
Thermal / Mechanical Characteristics
C
C
CM
LM
F
FM
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
@ Tc = 100°C
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C Maximum Power Dissipation
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 screw
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
TM
d
G
n-channel
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
–––
C
E
10 lbf
-55 to +150
6 (0.21)
y
Max.
Typ.
1200
in (1.1N
0.24
±20
160
–––
–––
–––
41
21
82
82
10
40
65
CE(on) typ.
y
m)
GE
CES
TO-247AD
Max.
0.77
–––
–––
2.5
40
=
C
Units
Units
g (oz.)
°C/W
°C
W
V
A
V
1

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IRG4PH40UD2-EP Summary of contents

Page 1

Features Absolute Maximum Ratings V Collector-to-Emitter Voltage CES Continuous Collector Current 25° 100°C Continuous Collector Current C C Pulse Collector Current I CM Clamped Inductive Load current I LM Diode ...

Page 2

Electrical Characteristics @ T Parameter Collector-to-Emitter Breakdown Voltage V (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient ...

Page 3

For both: 15 Duty cycle : 50 125°C 10 Tsink = 90°C Gate drive as specified 5 Power Dissipation = 35W 0 0.1 100 150 ...

Page 4

T , Case Temperature ( 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 4 15V GE 80 ...

Page 5

0V MHZ C ies = SHORTED 3500 C res = oes = 3000 Cies 2500 2000 1500 ...

Page 6

Ω 150° 800V 15V Collecto-to-Emitter (A) 6 1000 V = 20V GE ...

Page 7

www.irf.com (rec ...

Page 8

Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on d(on +Vge 10% ...

Page 9

Figure 18e. Macro Waveforms for 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...

Page 10

EXAMPLE: T HIS IS AN IRGP30B120KD-E WIT H ASS EMBLY INT ERNAT IONAL LOT CODE 5657 RECT IFIER AS SEMB LED ON WW 35, 2000 SEMBLY LINE "H" Note: "P" sembly line position indicates ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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