IXGH24N60B IXYS, IXGH24N60B Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGH24N60B
Manufacturer Part Number
IXGH24N60B
Description
IGBT 600V 48A 80NS TO-247AD
Specifications of IXGH24N60B
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 24A
Current - Collector (ic) (max)
48A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
48A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
48
Ic90, Tc=90°c, Igbt, (a)
24
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
80
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.4
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Part Number:
IXGH24N60B U1
HiPerFAST
Preliminary Data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
BV
V
I
I
V
© 2002 IXYS All rights reserved
CM
C25
C90
CES
GES
J
JM
stg
CGR
GES
GEM
C
GE(th)
CE(sat)
CES
d
CES
T
T
J
J
Test Conditions
= 25 C to 150 C
= 25 C to 150 C; R
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
GE
C
CE
GE
CE
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 25 C
= 250 A, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
TM
GE
GE
VJ
CES
= 15 V
= 20 V
= 125 C, R
GE
CE
IGBT
= 0 V
= V
GE
GE
= 1 M
G
= 22
T
T
(T
J
J
J
= 25 C
= 125 C
= 25 C, unless otherwise specified)
IXGH 24N60B
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
1.13/10
I
CM
typ.
= 48
600
150
150
300
600
30
48
24
96
CES
20
6
max.
200
100
5.5
2.3
Nm/lb.in.
1
mA
nA
W
V
V
V
V
A
A
A
A
g
V
V
V
C
C
C
C
A
TO-247 AD
G = Gate,
E = Emitter,
Features
• International standard packages
• High frequency IGBT
• High current handling capability
• 3rd generation HDMOS
• MOS Gate turn-on
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
Advantages
• High power density
• Switching speed for high frequency
• Easy to mount with 1 screw
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
- drive simplicity
power supplies
applications
(insulated mounting screw hole)
V
I
V
t
C25
G
fi
CES
CE(sat)
C
E
C = Collector,
TAB = Collector
= 600 V
= 48
= 2.3 V
= 80
TM
95584C(12/02)
C (TAB)
process
A
ns
Related parts for IXGH24N60B
IXGH24N60B Summary of contents
... 250 GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 2002 IXYS All rights reserved IXGH 24N60B Maximum Ratings 600 600 0.8 V CES 150 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. 6 Characteristic Values ( unless otherwise specified) J min. typ. max. 600 2.5 5.5 ...
... R off J R thJC R thCK Min. Recommended Footprint (Dimensions in inches and (mm)) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max ...
... V = 13V GE 11V 9V 160 7V 120 1.6 9V 1.4 7V 1.2 1.0 5V 0.8 0 1.2 1.1 1.0 0.9 0.8 0 Fig. 6. Temperature Dependence of BV IXGH24N60B T = 25° 15V J GE 11V Volts CE Fig. 2. Extended Output Characteristics I = 48A V = 15V 24A 12A 100 125 T - Degrees C J Fig. 4. Temperature Dependence of V ...
... D=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 2.5 2.0 1.5 E (ON) 1.0 0.5 0 ...
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