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IXST30N60B2D1
IXST30N60B2D1 | |
|---|---|
| Manufacturer Part Number | IXST30N60B2D1 |
| Description | IGBT HS W/DIODE 600V 48A TO268 |
| Manufacturer | IXYS |
| IXST30N60B2D1 datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
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Specifications of IXST30N60B2D1 | |||
|---|---|---|---|
| Igbt Type | PT | Voltage - Collector Emitter Breakdown (max) | 600V |
| Vce(on) (max) @ Vge, Ic | 2.5V @ 15V, 24A | Current - Collector (ic) (max) | 48A |
| Power - Max | 250W | Input Type | Standard |
| Mounting Type | Surface Mount | Package / Case | TO-268 |
| Channel Type | N | Configuration | Single |
| Collector-emitter Voltage | 600V | Collector Current (dc) (max) | 48A |
| Gate To Emitter Voltage (max) | ±20V | Package Type | TO-268 |
| Pin Count | 3 +Tab | Mounting | Through Hole |
| Operating Temperature (min) | -55 | Operating Temperature (max) | 150C |
| Operating Temperature Classification | Military | Vces, (v) | 600 |
| Ic25, Tc=25°c, Igbt, (a) | 48 | Ic90, Tc=90°c, Igbt, (a) | - |
| Vce(sat), Max, Tj=25°c, Igbt, (v) | 2.5 | Tfi, Typ, Igbt, (ns) | 140 |
| Eoff, Typ, Tj=125°c, Igbt, (mj) | 1.18 | Rthjc, Max, Igbt, (k/w) | 0.5 |
| Package Style | TO-268 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
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High Speed IGBT
with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
Symbol
Test Conditions
V
T
= 25°C to 150°C
CES
J
V
T
= 25°C to 150°C; R
CGR
J
V
Continuous
GES
V
Transient
GEM
I
T
= 25°C
C25
C
I
T
= 110°C
C110
C
I
F(110)
I
T
= 25°C, 1 ms
CM
C
SSOA
V
= 15 V, T
= 125°C, R
GE
J
(RBSOA)
Clamped inductive load
t
V
= 15 V, V
= 360 V, T
SC
GE
CE
(SCSOA)
R
= 10 Ω, non repetitive
G
P
T
= 25°C
C
C
T
J
T
JM
T
stg
Weight
TO-247
TO-268
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
Symbol
Test Conditions
= 750 µA, V
V
I
= V
GE(th)
C
CE
I
V
= V
CES
CE
CES
V
= 0 V
GE
I
V
= 0 V, V
= ± 20 V
GES
CE
GE
V
I
= 24A, V
= 15 V
CE(sat)
C
GE
© 2004 IXYS All rights reserved
IXSH 30N60B2D1
IXST 30N60B2D1
Maximum Ratings
600
= 1 MΩ
600
GE
± 20
± 30
48
30
28
90
= 10Ω
I
= 48
G
CM
@ 0.8 V
CES
= 125°C
10
J
250
-55 ... +150
150
-55 ... +150
6
5
300
260
Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min.
typ.
max.
4.0
GE
± 100
V
CES
I
C25
V
CE(sat)
TO-247 (IXSH)
V
V
V
V
G
C
E
A
A
A
TO-268 (IXST)
A
A
G
E
µs
W
G = Gate
C = Collector
E = Emitter
TAB = Collector
°C
°C
Features
°C
• International standard package
g
• Guaranteed Short Circuit SOA
g
capability
• Low V
°C
CE(sat)
- for low on-state conduction losses
• High current handling capability
°C
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
7.0
V
Advantages
150
µA
• High power density
1
mA
nA
2.5
V
= 600 V
= 48 A
= 2.5 V
C (TAB)
C (TAB)
DS99249(10/04)
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IXST30N60B2D1 Summary of contents |
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