FGA15N120ANTDTU_F109 Fairchild Semiconductor, FGA15N120ANTDTU_F109 Datasheet

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FGA15N120ANTDTU_F109

Manufacturer Part Number
FGA15N120ANTDTU_F109
Description
IGBT NPT 15A 1200V TO-3P
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGA15N120ANTDTU_F109.pdf (10 pages)

Specifications of FGA15N120ANTDTU_F109

Igbt Type
NPT and Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
186W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
FGA15N120ANTD / FGA15N120ANTD_F109
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: V
• Low switching loss: E
• Extremely enhanced avalanche capability
Absolute Maximum Ratings
Thermal Characteristics
V
V
I
I
I
I
P
T
T
T
R
R
R
C
CM
F
FM
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
stg
J
L
CES
GES
D
Symbol
θJC
θJC
θJA
@ I
@ I
Symbol
C
C
= 15A and T
= 15A and T
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
C
C
= 25°C
= 25°C
G C E
off, typ
CE(sat), typ
= 0.6mJ
Description
= 1.9V
Parameter
TO-3P
(Note 1)
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 25°C
= 100°C
= 100°C
= 25°C
= 100°C
1
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven, etc.
FGA15N120ANTD
Typ.
G
G
--
--
--
-55 to +150
-55 to +150
1200
± 20
186
300
30
15
45
15
45
74
C
C
Max.
E
E
0.67
2.88
40
May 2006
Units
www.fairchildsemi.com
°C
°C
°C
Units
W
W
V
V
A
A
A
A
A
°C/W
°C/W
°C/W
tm

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FGA15N120ANTDTU_F109 Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient θJA Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature ©2007 Fairchild Semiconductor Corporation FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction = 1.9V and switching performances, high avalanche ruggedness and easy parallel operation ...

Page 2

Package Marking and Ordering Information Device Marking Device FGA15N120ANTD FGA15N120ANTD Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage GE(th) V Collector to Emitter ...

Page 3

Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Cur- rr rent Q Diode Reverse Recovery Charge rr FGA15N120ANTD / FGA15N120ANTD_F109 Rev 25°C unless ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 200 20V C 17V 150 100 Collector-Emitter Voltage, V Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 ...

Page 5

Typical Performance Characteristics Figure 7. Turn-On Characteristics vs. Gate Resistance 100 tr 10 td(on Gate Resistance, R Figure 9. Switching Loss vs. Gate Resistance Common Emitter V = 600V 15V CC GE ...

Page 6

Typical Performance Characteristics Figure 13. Gate Charge Characteristics 15 Common Emitter Ω Vcc = 200V Gate Charge Figure 15. ...

Page 7

Typical Performance Characteristics Figure 17. Forward Characteristics 125 0.1 0.0 0.4 0.8 1.2 Forward Voltage , V Figure 19. Stored Charge 7000 6000 μ di/dt = 200A/ s ...

Page 8

Mechanical Dimensions 15.60 13.60 ø3.20 ±0.10 9.60 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 5.45TYP [5.45 ] ±0.30 FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 TO-3P ±0.20 ±0.20 ±0.20 5.45TYP [5.45 ] ±0.30 8 4.80 ±0.20 +0.15 1.50 –0.05 1.40 ±0.20 +0.15 0.60 ...

Page 9

Mechanical Dimensions (continued) FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 TO-3PN 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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