FGA25N120ANTDTU_F109 Fairchild Semiconductor, FGA25N120ANTDTU_F109 Datasheet

FGA25N120ANTDTU_F109

Manufacturer Part Number

FGA25N120ANTDTU_F109

Description

IGBT NPT 25A 1200V TO-3P

Manufacturer

Fairchild Semiconductor

Datasheet

1.FGA25N120ANTDTU_F109.pdf (9 pages)

Specifications of FGA25N120ANTDTU_F109

Igbt Type

NPT and Trench

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

2.5V @ 15V, 25A

Current - Collector (ic) (max)

50A

Power - Max

312W

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-3PN-3

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2

FGA25N120ANTD/FGA25N120ANTD_F109

1200V NPT Trench IGBT

Features

• NPT Trench Technology, Positive temperature coefficient

• Low saturation voltage: V

• Low switching loss: E

• Extremely enhanced avalanche capability

Absolute Maximum Ratings

Thermal Characteristics

stg

CES

GES

Symbol

θJC

θJA

@ I

Symbol

= 25A and T

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current

Pulsed Collector Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Thermal Resistance, Junction-to-Case for IGBT

Thermal Resistance, Junction-to-Case for Diode

Thermal Resistance, Junction-to-Ambient

= 25°C

G C E

off, typ

CE(sat), typ

= 0.96mJ

Description

= 2.0V

Parameter

TO-3PN

(Note 1)

@ T

= 25°C

= 100°C

= 25°C

= 100°C

Description

Using Fairchild's proprietary trench design and advanced NPT

technology, the 1200V NPT IGBT offers superior conduction

and switching performances, high avalanche ruggedness and

easy parallel operation.

This device is well suited for the resonant or soft switching appli-

cation such as induction heating, microwave oven, etc.

FGA25N120ANTD

Typ.

-55 to +150

1200

± 20

150

312

125

300

Max.

0.4

2.0

July, 2007

Units

www.fairchildsemi.com

°C

Units

°C/W

Related parts for FGA25N120ANTDTU_F109

FGA25N120ANTDTU_F109 Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Case for Diode θJC R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction = 2.0V and switching performances, high avalanche ruggedness and easy parallel operation ...

Page 2

Package Marking and Ordering Information Device Marking Device FGA25N120ANTD FGA25N120ANTD Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage GE(th) V Collector to Emitter ...

Page 3

Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Cur- rr rent Q Diode Reverse Recovery Charge rr FGA25N120ANTD / FGA25N120ANTD_F109 Rev 25°C unless ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 ° 20V 15V 12V 17V 160 140 120 100 Collector-Emitter Voltage, V Figure 3. Saturation Voltage vs. ...

Page 5

Typical Performance Characteristics Figure 7. Capacitance Characteristics 5000 4500 Ciss 4000 3500 3000 2500 2000 1500 1000 Coss 500 Crss 0 1 Collector-Emitter Voltage, V Figure 9. Turn-Off Characteristics vs. Gate Resistance 1000 100 Common Emitter ± 600V, ...

Page 6

Typical Performance Characteristics Figure 13. Switching Loss vs. Collector Current Common Emitter ± Ω 15V ° ° 125 0 ...

Page 7

Typical Performance Characteristics Figure 18. Forward Characteristics 50 10 ° 125 0.1 0.0 0.4 0.8 1.2 Forward Voltage , V Figure 20. Stored Charge 4000 3000 µ di/dt = 200A/ s ...

Page 8

Mechanical Dimensions (continued) FGA25N120ANTD /FGA25N!20ANTD_F109 Rev. B2 TO-3PN 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...

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