FGH60N60UFDTU Fairchild Semiconductor, FGH60N60UFDTU Datasheet

IGBT 120A 600V FIELD STOP TO-247

FGH60N60UFDTU

Manufacturer Part Number
FGH60N60UFDTU
Description
IGBT 120A 600V FIELD STOP TO-247
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGH60N60UFDTU.pdf (9 pages)

Specifications of FGH60N60UFDTU

Igbt Type
Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 60A
Current - Collector (ic) (max)
120A
Power - Max
298W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
FGH60N60UFDTU
Manufacturer:
FAIRCHILD
Quantity:
8 000
Company:
H&T Electronics H&T Electronics
Part Number:
FGH60N60UFDTU
Quantity:
4 500
©2009 Fairchild Semiconductor Corporation
FGH60N60UFD Rev. A1
Absolute Maximum Ratings
Notes:
1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
FGH60N60UFD
600V, 60A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
V
V
I
I
P
T
T
T
R
R
R
C
CM (1)
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(Diode)
Thermal Resistance, Junction to Case
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CE(sat)
= 1.9V @ I
Description
Parameter
C
E
= 60A
COLLECTOR
C
(FLANGE)
G
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 100
= 25
= 25
= 100
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc
tion and switching losses are essential.
o
o
o
C
C
C
o
o
C
C
Typ.
-
-
-
G
-55 to +150
-55 to +150
Ratings
± 20
600
120
180
298
300
119
60
Max.
0.33
1.1
C
E
40
April 2009
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
C
C
C
tm

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FGH60N60UFDTU Summary of contents

Page 1

... R (Diode) Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FGH60N60UFD Rev. A1 General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction = 60A C Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential ...

Page 2

... Package Marking and Ordering Information Device Marking Device FGH60N60UFD FGH60N60UFDTU Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector to Emitter Breakdown Voltage V CES ∆BV Temperature Coefficient of Breakdown CES ∆T Voltage J I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage ...

Page 3

Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr FGH60N60UFD Rev 25°C unless otherwise noted C Test Conditions ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 20V 15V 150 12V 120 Collector-Emitter Voltage, V Figure 3. Typical Saturation Voltage Characteristics 180 Common Emitter V ...

Page 5

Typical Performance Characteristics Figure 7. Saturation Voltage vs 60A 30A Gate-Emitter Voltage, V Figure 9. Capacitance Characteristics 6000 C ies 4000 C oes 2000 C res ...

Page 6

Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance 300 100 t r Common Emitter 60A C t d(on Gate Resistance, R Figure 15. Turn-on Characteristics ...

Page 7

Typical Performance Characteristics Figure 19. Forward Characteristics 200 100 125 Forward Voltage, V Figure 21. Stored Charge 100 80 µ 200A/ s µ 60 di/dt = ...

Page 8

Mechanical Dimensions TO-247AB (FKS PKG CODE 001) FGH60N60UFD Rev www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...

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