HGTG30N60A4D Fairchild Semiconductor, HGTG30N60A4D Datasheet

IGBT N-CH SMPS 600V 60A TO-247

HGTG30N60A4D

Manufacturer Part Number
HGTG30N60A4D
Description
IGBT N-CH SMPS 600V 60A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet
1.HGTG30N60A4D.pdf (9 pages)

Specifications of HGTG30N60A4D

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 30A
Current - Collector (ic) (max)
75A
Power - Max
463W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Type
IGBT
Dc Collector Current
75A
Collector Emitter Voltage Vces
2.6V
Power Dissipation Pd
463W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-247
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
HGTG30N60A4D_NL
HGTG30N60A4D_NL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
HGTG30N60A4D
Manufacturer:
ST
Quantity:
2 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
HGTG30N60A4D
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
HGTG30N60A4D
Quantity:
5 000
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence. This is a preliminary
notification. A Final PCN will be issued when qualification is complete and data is available.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: Sun, Brian
E-mail: Brian.Sun@fairchildsemi.com
Phone:
Implementation of change:
Expected 1st Device Shipment Date: 2008/03/20
Earliest Year/Work Week of Changed Product: 0812
Change Type Description: Lead Frame Composition
Description of Change (From): The material composition of lead frame is bare copper with full
Ni-plating
Description of Change (To): The material composition of lead frame is bare copper without
Ni-plating. lead frame Plating method change from Option 2(full nickle plating) to Option 1(
bare copper). Refer to attached lead frame drawing. There is no change in package dimension,
process and electrical specification.
Reason for Change : Quality improvement to enhance the adhesion strength between EMC and
lead frame
Qual/REL Plan Numbers : Q20070460
Qualification :
To qualify TO247 bare copper leadframe, improve quality to enhance the adhesion
strength between EMC and lead frame, to prevent moisture enter into package
Change To
Technical Contact:
Name: LEE, SANGDO
E-mail: SANGDO.LEE@fairchildsemi.com
Phone: 86-512-6762-3311 ext 8671
FORECAST CHANGE NOTIFICATION
Date Issued On : 2007/12/20
Date Created : 2007/11/30
PCN# : Q4074814
Pg. 1

Related parts for HGTG30N60A4D

Image
Part Number
Description
Manufacturer
Datasheet
Request R
SM2G50US60
Part Number:
SM2G50US60
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
SM2G50US60.pdf (10 pages)
FTP5027RTU
Part Number:
FTP5027RTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FTP5021OTU
Part Number:
FTP5021OTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FDMS86300DC
Part Number:
FDMS86300DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86300DC.pdf (8 pages)
FDMS3006SDC
Part Number:
FDMS3006SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3006SDC.pdf (9 pages)
FDMS3008SDC
Part Number:
FDMS3008SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3008SDC.pdf (9 pages)
FDMS3016DC
Part Number:
FDMS3016DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3016DC.pdf (8 pages)
FDMS86101DC
Part Number:
FDMS86101DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86101DC.pdf (8 pages)
FDD86113LZ
Part Number:
FDD86113LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDD86113LZ.pdf (6 pages)
FDMS86500DC
Part Number:
FDMS86500DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86500DC.pdf (8 pages)
FDMS8558S
Part Number:
FDMS8558S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8558S.pdf (8 pages)
FDMS8560S
Part Number:
FDMS8560S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8560S.pdf (8 pages)
FDMS8570S
Part Number:
FDMS8570S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8570S.pdf (8 pages)
FDMC86116LZ
Part Number:
FDMC86116LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMC86116LZ.pdf (7 pages)
FDMS86250
Part Number:
FDMS86250
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86250.pdf (7 pages)

HGTG30N60A4D Summary of contents

Page 1

... This notification is for your information and concurrence. This is a preliminary notification. A Final PCN will be issued when qualification is complete and data is available. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. If you have any questions concerning this change, please contact: ...

Page 2

Qualification Stress Test and Sample Size Detail Device #1 FGH50N6S2D Package: #Leads: Environment Stress Detail: Stress P/C Standard ACLV JESD22-A102 100%RH, 121C 96 PRCL MIL- STD-750-1036 TMCL1 JESD22-A104 -65C, 150C Device #2 HGTG27N120BN Package: #Leads: Environment Stress Detail: Stress P/C ...

Page 3

... MIL- STD-750-1036 TMCL1 JESD22-A104 -65C, 150C Product Id Description : Affected FSIDs : FDH038AN08A1 FDH27N50 FFH15S60STU FFH50US60S FGH30N6S2D_W49009A FGH50N6S2 HGTG11N120CN HGTG12N60A4D HGTG18N120BN HGTG20N60A4D HGTG20N60C3D HGTG30N60A4D 200 500 Readpoints Conditions TP1 TP2 85%RH, 85C, 1000 5000 80% of related BV,Max=100V 200 500 Readpoints Conditions TP1 TP2 ...

Page 4

HGTG30N60C3D HGTG40N60C3_R4752 HGTG7N60A4D HUF75345G3 HUF75852G3 ISL9K30120G3 ISL9R18120G2 ISL9R3060G2 RHRG30120 RHRG5060 RURG3020CC RURG5060 RURG8060 HGTG40N60A4 HGTG5N120BND HUF75339G3 HUF75639G3 ISL9K1560G3 ISL9K3060G3 ISL9R2480G2_S2611 RFG70N06 RHRG3060 RHRG75120 RURG3060 RURG5060_R4857 HGTG40N60B3 HGTG7N60A4 HUF75344G3 HUF75652G3 ISL9K18120G3 ISL9R1560G2 ISL9R30120G2 RHRG1560CC RHRG3060CC RURG1520CC RURG3060CC RURG80100 Pg. 4 ...

Related keywords