APT50GT120B2RG Microsemi Power Products Group, APT50GT120B2RG Datasheet
APT50GT120B2RG
Manufacturer Part Number
APT50GT120B2RG
Description
IGBT 1200V 94A 625W TO247
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet
1.APT50GT120B2RG.pdf
(6 pages)
Specifications of APT50GT120B2RG
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
94A
Power - Max
625W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT50GT120B2RGMI
APT50GT120B2RGMI
APT50GT120B2RGMI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT50GT120B2RG
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
The Thunderbolt IGBT
Non-Punch-Through Technology, the Thunderbolt IGBT
ness and ultrafast switching speed.
Features
• Low Forward Voltage Drop
• Low Tail Current
• RoHS Compliant
Maximum Ratings
Static Electrical Characteristics
Symbol Parameter
Symbol Characteristic / Test Conditions
T
V
V
V
SSOA
J
V
(BR)CES
V
, T
GE(TH)
CE(ON)
I
I
I
P
I
I
CES
GES
T
CM
CES
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector Emitter On Voltage (V
Collector Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
Thunderbolt IGBT
is a new generation of high voltage power IGBTs. Using
1
CE
CE
CE
Microsemi Website - http://www.microsemi.com
= V
= 1200V, V
= 1200V, V
GE
GE
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
GE
GE
= 15V, I
= 15V, I
C
C
, I
= 100°C
= 25°C
J
= ±20V)
= 150°C
C
= 2mA, T
®
GE
GE
GE
C
C
®
= 0V, I
= 50A, T
= 50A, T
= 0V, T
= 0V, T
offers superior rugged-
j
= 25°C)
C
= 3mA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
2
All Ratings: T
2
APT50GT120B2R(G)
C
= 25°C unless otherwise specifi ed.
APT50GT120LR(G)
1200V, 50A, V
1200
Min
4.5
2.7
-
-
-
-
150A @ 1200V
-55 to 150
Ratings
1200
±30
150
625
300
94
50
Typ
5.5
3.2
4.0
-
-
-
-
CE(ON)
.
Max
200
300
6.5
3.7
2.0
= 3.2V Typical
-
-
Amps
Unit
Volts
Watts
Unit
Volts
°C
mA
μA
nA
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APT50GT120B2RG Summary of contents
Page 1
Thunderbolt IGBT The Thunderbolt IGBT ® new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT ness and ultrafast switching speed. Features • Low Forward Voltage Drop • Low Tail Current • RoHS Compliant Unless ...
Page 2
Dynamic Characteristics Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q Total Gate Charge g Gate-Emitter Charge Gate-Collector Charge gc SSOA Switching Safe Operating Area ...
Page 3
Typical Performance Curves 150 V = 15V 25°C J 125 T = 55°C J 100 125° COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 1, ...
Page 4
Typical Performance Curves 15V 800V 25°C or 125° 1.0Ω 100μ ...
Page 5
Typical Performance Curves 5000 1000 100 10 0 100 200 300 V , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 0. 0.9 0.7 0.15 0 0.3 0.05 0.1 0. ...
Page 6
APT30DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90 125°C J 90% Gate Voltage t d(off) Collector Voltage t f 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Defi ...