IRG4RC10KDTRPBF International Rectifier, IRG4RC10KDTRPBF Datasheet

no-image

IRG4RC10KDTRPBF

Manufacturer Part Number
IRG4RC10KDTRPBF
Description
DIODE IGBT 600V 9.0A D-PAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4RC10KDTRPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.62V @ 15V, 5A
Current - Collector (ic) (max)
9A
Power - Max
38W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for
• Generation 4 IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-252AA package
• Lead-Free
Benefits
Thermal Resistance
www.irf.com
• Latest generation 4 IGBT's offer highest power density
• HEXFRED
• For hints see design tip 97003
V
I
I
I
I
I
I
t
V
P
P
T
T
R
R
R
Wt
Circuit Rated to 10µs @ 125°C, V
parameter distribution and higher efficiency than
For recommended footprint and soldering techniques refer to application note #AN-994
high operating frequencies >5.0 kHz , and Short
previous generation
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Minimized recovery characteristics reduce noise, EMI and
C
C
CM
LM
F
FM
sc
When mounted on 1" square PCB (FR-4 or G-10 Material).
STG
motor controls possible
switching losses
CES
GE
D
D
J
θJC
θJC
θJA
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
diodes optimized for performance with IGBTs.
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Parameter
Parameter
GE
TM
= 15V
ultrafast,

IRG4RC10KDPbF
G
n-channel
300 (0.063 in. (1.6mm) from case)
0.3 (0.01)
Typ.
–––
–––
–––
C
E
-55 to +150
Max.
± 20
600
9.0
5.0
4.0
18
18
16
10
38
15
Short Circuit Rated
@V
V
CE(on) typ.
UltraFast IGBT
Max.
V
GE
–––
3.3
7.0
50
CES
= 15V, I
= 600V
= 2.39V
C
= 5.0A
Units
Units
g (oz)
µs
°C
V
A
V
1

Related parts for IRG4RC10KDTRPBF

IRG4RC10KDTRPBF Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V • Generation 4 IGBT design provides tighter parameter ...

Page 2

Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward ...

Page 3

Square wave: 60% of rated 0.8 voltage I 0.4 Ideal diodes 0.0 0.1 Fig Typical Load Current vs. Frequency 100 150 20µs PULSE WIDTH ...

Page 4

T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 (THERMAL ...

Page 5

1MHz ies res oes ce gc 300 C ies 200 100 C oes C res 0 ...

Page 6

R = Ohm 150 C ° 480V 15V GE 1.5 1.0 0.5 0 Collector Current (A) C Fig Typical Switching Losses ...

Page 7

V = 200V 125° 25° 100 di /dt - (A/µs) f 200 V = 200V 125° 25°C J 160 I ...

Page 8

Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. ...

Page 9

Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...

Page 10

A - 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 1.14 (.045) 2X 0.76 (.030) 2.28 (.090) EXAMPLE: THIS IS AN IRFR120 WITH AS S EMBLY LOT ...

Page 11

Notes:  Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20) ‚ V =80%( =20V, L=10µ CES GE ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords