IRG4BC40KPBF International Rectifier, IRG4BC40KPBF Datasheet

IGBT UFAST 600V 42A TO220AB

IRG4BC40KPBF

Manufacturer Part Number
IRG4BC40KPBF
Description
IGBT UFAST 600V 42A TO220AB
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4BC40KPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 25A
Current - Collector (ic) (max)
42A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
*IRG4BC40KPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BC40KPBF
Manufacturer:
IR
Quantity:
5 311
Company:
Part Number:
IRG4BC40KPBF
Quantity:
9 000
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Features
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Short Circuit Rated UltraFast: optimized for high
• Generation 4 IGBT design provides higher efficiency
• Industry standard TO-247AC package
• Lead-Free
V
I
I
I
I
t
V
E
P
P
T
T
R
R
R
Wt
C
C
CM
LM
sc
Rated to 10µs @ 125°C, V
operating frequencies >5.0 kHz , and Short Circuit
than Generation 3
J
STG
CES
GE
ARV
D
D
θJC
θCS
θJA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
GE
= 15V
Parameter
G
n-channel
IRG4BC40KPbF
300 (0.063 in. (1.6mm) from case)
2 (0.07)
Typ.
0.50
–––
–––
C
E
10 lbf•in (1.1N•m)
-55 to +150
Max.
TO-220AB
600
±20
160
42
25
84
84
10
15
65
Short Circuit Rated
@V
V
CE(on) typ.
Max.
V
GE
0.77
–––
–––
80
UltraFast IGBT
CES
= 15V, I
PD -95174
= 600V
= 2.1V
C
Units
= 25A
04/23/04
g (oz)
°C/W
Units
mJ
µs
°C
W
V
A
V
1

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IRG4BC40KPBF Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4BC40KPbF Short Circuit Rated UltraFast IGBT C V CES V CE(on) typ 15V n-channel TO-220AB Max. 600 42 ...

Page 2

... IRG4BC40KPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage T (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance Zero Gate Voltage Collector Current ...

Page 3

... PULSE WIDTH 1 0 Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com ° sink riv ifie tio Frequency (kHz) (Load Current = I of fundamental) RMS 15V Fig Typical Transfer Characteristics IRG4BC40KPbF T ria ° lta 150° 25° 50V C C 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

Page 4

... IRG4BC40KPbF 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02  SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 1.0 125 150 -60 -40 -20 ° ...

Page 5

... G Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 0 -60 -40 -20 Ω Fig Typical Switching Losses vs. IRG4BC40KPbF = 400V = 25A 100 120 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω = 10Ohm = 15V  = 480V 12 100 120 140 160 T , Junction Temperature ( C ) ° ...

Page 6

... IRG4BC40KPbF 5.0  Ω 10Ohm 150 C ° 480V 15V 4.0 GE 3.0 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000  V = 20V 125 C J 100 10  SAFE OPERATING AREA Fig Turn-Off SOA o 10 100 1000 , Collector-to-Emitter Voltage (V) www.irf.com ...

Page 7

... Load Test Circuit 50V 1000V www.irf.com 480V .T. D river ff t=5µ IRG4BC40KPbF 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4BC40KPbF TO-220AB Package Outline (. (. (. (. . . (. (. . . (. & TO-220AB Part Marking Information "C " te: "P " in ass line pos ition indicate s "Le ad-F ree" IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 3 4.69 (. 3 4.20 (. 6 6 .06 (. .55 (. ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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