IRGB4059DPBF International Rectifier, IRGB4059DPBF Datasheet

IGBT ULT FAST DIO 600V TO-220AB

IRGB4059DPBF

Manufacturer Part Number
IRGB4059DPBF
Description
IGBT ULT FAST DIO 600V TO-220AB
Manufacturer
International Rectifier
Datasheet

Specifications of IRGB4059DPBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.05V @ 15V, 4A
Current - Collector (ic) (max)
8A
Power - Max
56W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
56W
Collector Emitter Voltage V(br)ceo
600V
No. Of Pins
3
C-e Breakdown Voltage
2.2V
Collector Emitter Saturation Voltage Vce(sat)
2.05V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGB4059DPBF
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRGB4059DPBF
Manufacturer:
IR
Quantity:
12 259
ULTRAFAST SOFT RECOVERY DIODE
Features
Benefits
1
V
I
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Wt
Absolute Maximum Ratings
Thermal Resistance
C
C
CM
LM
F
F
FM
J
STG
CES
@T
@T
GE
D
D
@ T
@ T
θJC
θJC
θCS
θJA
Low V
Low Switching Losses
Maximum Junction temperature 175 °C
5µs SCSOA
Square RBSOA
100% of The Parts Tested for 4X Rated Current (I
Positive V
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free Package
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low V
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
@ T
@ T
C
C
C
C
=25°C
=100°C
C
C
= 25°C
= 100°C
CE (on)
=25°
=100°
CE (ON)
CE (on)
Trench IGBT Technology
and Low Switching Losses
Temperature Coefficient.
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current c
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case - IGBT e
Junction-to-Case - Diode e
Case-toSink, flat, greased surface
Junction-to-Ambient, typical socket mount e
Weight
Parameter
Parameter
LM
)
WITH
G
Gate
G
n-channel
Min.
300 (0.063 in. (1.6mm) from case)
C
E
IRGB4059DPbF
-55 to + 175
C
Collector
Typ.
± 20
± 30
1.44
600
0.5
16
16
16
56
28
80
8
4
8
4
Max.
C
C
=
CE(on) typ.
G
Max.
CES
C
2.70
6.30
E
C
=
Emitter
www.irf.com
E
Units
Units
°C/W
°C
W
g
V
A
V
4/14/06

Related parts for IRGB4059DPBF

IRGB4059DPBF Summary of contents

Page 1

... Soldering Temperature, for 10 seconds Thermal Resistance Junction-to-Case - IGBT e R θJC Junction-to-Case - Diode e R θJC R Case-toSink, flat, greased surface θCS Junction-to-Ambient, typical socket mount e R θJA Wt Weight 1 WITH G n-channel ) LM G Gate Parameter Parameter Min. IRGB4059DPbF C CES = CE(on) typ Collector Emitter Max. Units 600 ...

Page 2

... IRGB4059DPbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V Threshold Voltage temp. coefficient /∆TJ GE(th) gfe Forward Transconductance I CES Collector-to-Emitter Leakage Current ...

Page 3

... DC 100 1000 175°C ≤ 18V VGE = 15V VGE = 12V VGE = 10V 12 VGE = 8. IRGB4059DPbF 100 120 140 160 180 T C (°C) Fig Power Dissipation vs. Case Temperature 1 10 100 V CE (V) Fig Reverse Bias SOA T = 175° 15V J CE ...

Page 4

... IRGB4059DPbF 18V VGE = 15V VGE = 12V 12 VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = 175° 80µ (V) Fig Typical -40° (V) Fig Typical 175° -40°C 25°C 175°C 0 0.0 1.0 2.0 3.0 4.0 5.0 6 (V) Fig Typ. Diode Forward Characteristics tp = 80µ ...

Page 5

... I F (A) Fig Typical Diode 175°C J www.irf.com 100Ω 15V 100 125 15V Ω Ω Ω 100 Ω vs IRGB4059DPbF 1000 td OFF 100 (A) Fig Typ. Switching Time vs 175°C; L=1mH 400V 100Ω 15V G GE 1000 100 100 R G (Ω) Fig. 16- Typ. Switching Time vs 175° ...

Page 6

... IRGB4059DPbF 500 di F /dt (A/µs) Fig. 19- Typical Diode 400V 15V 4A 175° 250 200 150 10 Ω 22 Ω 100 47 Ω 100 Ω (A) Fig Typical Diode 175°C J 1000 100 (V) Fig. 23- Typ. Capacitance vs 0V 1MHz GE 6 800 700 600 500 400 300 200 ...

Page 7

... τ J τ τ 1 τ 2 τ Ci= τi/Ri Ci= τi/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + Tc 0.0001 0.001 Rectangular Pulse Duration (sec) IRGB4059DPbF τι (sec (°C/ τ 0.932018 0.000205 C τ τ 3 1.112118 0.00129 τ 3 0.657365 0.010446 0.01 0.1 τι (sec (°C/ τ ...

Page 8

... IRGB4059DPbF 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.5 - Resistive Load Circuit 8 L VCC DUT - Fig.C.T.4 - Switching Loss Circuit Fig.C.T.6 - Typical Filter Circuit for L DUT 480V Rg Fig.C.T.2 - RBSOA Circuit V Measurement (BR)CES www.irf.com ...

Page 9

... CT.4 J time (µS) WF.3- Typ. Reverse Recovery Waveform @ T = 175°C using CT.4 J www.irf.com -100 -2 1.60 10 -100 0.25 IRGB4059DPbF 500 400 tr 300 90% test 200 t TEST CURRE 10% test current 100 Loss ON 11.90 12.10 Time (µs) Fig. WF2 - Typ. Turn-on Loss Waveform @ T = 175° ...

Page 10

... IRGB4059DPbF EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN THE ASS EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB packages are not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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