IXGR12N60C IXYS, IXGR12N60C Datasheet
IXGR12N60C
Manufacturer Part Number
IXGR12N60C
Description
IGBT 24A 600V ISOPLUS247
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGR12N60C.pdf
(2 pages)
Specifications of IXGR12N60C
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 12A
Current - Collector (ic) (max)
15A
Power - Max
55W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
15A
Gate To Emitter Voltage (max)
±20V
Package Type
ISOPLUS 247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
15
Ic90, Tc=90°c, Igbt, (a)
8
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
55
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.27
Rthjc, Max, Igbt, (°c/w)
2.27
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
HiPerFAST
ISOPLUS247
(Electrically Isolated Back Surface)
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
Weight
Symbol
BV
V
I
I
V
© 2002 IXYS All rights reserved
CM
C25
C90
CES
GES
J
JM
stg
CGR
GEM
C
ISOL
GE(th)
CE(sat)
CES
GES
CES
Test Conditions
Isolation Voltage
Test Conditions
C
C
C
J
J
C
C
C
GE
C
GE
CE
CE
T
TM
GE
TM
GE
VJ
CES
IGBT
GE
GE
GE
GE
G
J
J
J
IXGR 12N60C
min.
Characteristic Values
Maximum Ratings
typ.
CM
2500
CES
max.
V
ISOPLUS 247
Features
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
V
I
V
t
CE (sat)
C25
fi(typ)
CE(sat)
CES
E153432
G
C
= 600
=
= 2.7
=
E
15
55 ns
Isolated Backside*
98663B (02/02)
TM
V
A
V
Related parts for IXGR12N60C
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXGR12N60C Summary of contents
Page 1
... JM T stg V Isolation Voltage ISOL Weight Symbol Test Conditions BV CES GE(th CES CE CES GE I GES CE(sat © 2002 IXYS All rights reserved IXGR 12N60C Maximum Ratings CES 2500 Characteristic Values J min. typ. max 600 V CES C25 V = 2.7 V CE(sat fi(typ) ISOPLUS 247 ...
Page 2
... CES G t d(off off R thJC R thCK T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values J min. typ. max. CE CES = 25 C off CES J = 125 C off CES J 4,835,592 ...