IXGH15N120B IXYS, IXGH15N120B Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGH15N120B
Manufacturer Part Number
IXGH15N120B
Description
IGBT 30A 1200V TO-247AD
Specifications of IXGH15N120B
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
180W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
30A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
30
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
15
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.2
Tfi, Typ, Tj=25°c, Igbt, (ns)
160
Eoff, Typ, Tj=125°c, Igbt, (mj)
3.5
Rthjc, Max, Igbt, (°c/w)
0.65
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXGH15N120B 2D1
Part Number:
IXGH15N120B D1
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
Weight
HiPerFAST
Symbol
BV
V
I
I
V
© 2002 IXYS All rights reserved
CM
C25
C110
CES
GES
JM
J
stg
CGR
GES
GEM
C
CES
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 110 C
= 25 C, 1 ms
= 15 V, T
= 25 C
= 250 A, V
= 250 A, V
= V
= 0 V
= 0 V, V
= I
C90
CES
, V
TM
GE
GE
VJ
= 15 V
= 125 C, R
= 20 V
GE
CE
= 0 V
= V
IGBT
GE
GE
= 1 M
G
= 10
T
T
T
(T
J
J
J
J
= 25 C
= 125 C
= 125 C
= 25 C, unless otherwise specified)
IXGH 15N120B
IXGT 15N120B
TO-247 AD
TO-268
1200
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
typ.
2.5
1.13/10Nm/lb.in.
I
CM
1200
1200
= 40
260
180
150
300
20
30
30
15
60
CES
max.
6
4
100
100
3.5
3.2
5
mA
nA
W
C
C
C
C
C
V
V
V
V
A
A
A
A
g
g
A
V
V
V
V
V
I
V
t
Features
• International standard packages
• Low switching losses, low V
• MOS Gate turn-on
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
Advantages
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
T O - 2 6 8
(IXGT)
TO-247 AD (IXGH)
G = Gate,
E = Emitter,
C25
fi(typ)
JEDEC TO-268 surface and
JEDEC TO-247 AD
- drive simplicity
power supplies
(isolated mounting screw hole)
CES
CE(sat)
G
G
C
= 1200 V
=
= 160 ns
= 3.2 V
E
C = Collector,
TAB = Collector
E
30 A
98659-B (9/02)
(sat)
C (TAB)
C (TAB)
Related parts for IXGH15N120B
IXGH15N120B Summary of contents
... 250 GE(th CES CE CES GES CE(sat) C C90 GE © 2002 IXYS All rights reserved IXGH 15N120B IXGT 15N120B Maximum Ratings 1200 = 1 M 1200 0.8 V CES 180 -55 ... +150 150 -55 ... +150 300 260 1.13/10Nm/lb.in. TO-247 AD TO-268 Characteristic Values ( unless otherwise specified) J min. typ. max. ...
... T or increased off R thJC R (TO-247) thCK Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 1720 ...
... Fig. 3. Saturation Voltage Characteristics @ 125 125 15V GS 13V 11V Volts CE Fig. 5. Admittance Curves - © 2002 IXYS All rights reserved 10000 o = 125 C 1000 Volts IXGH IXGT Fig. 2. Extended Output Characteristics 150 V = 15V 125 13V 100 11V Volts CE Fig. 4. Temperature Dependence of V 1.6 V ...
... D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents Fig. 8. Dependence of E OFF (OFF ...
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