IRG4BC40WPBF International Rectifier, IRG4BC40WPBF Datasheet

IGBT WARP 600V 40A TO220AB

IRG4BC40WPBF

Manufacturer Part Number
IRG4BC40WPBF
Description
IGBT WARP 600V 40A TO220AB
Manufacturer
International Rectifier
Datasheets
1.IRG4BC40WPBF.pdf (8 pages)
2.IRG4BC40W.pdf (9 pages)

Specifications of IRG4BC40WPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4BC40WPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4BC40WPBF
Manufacturer:
SILICON
Quantity:
7 600
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4BC40WPBF
Manufacturer:
International Rectifier
Quantity:
135
Company:
H&T Electronics H&T Electronics
Part Number:
IRG4BC40WPBF
Quantity:
2 400
Company:
H&T Electronics H&T Electronics
Part Number:
IRG4BC40WPBF
Quantity:
15 133
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Features
Features
Features
Features
Features
• Lower switching losses allow more cost-effective
• Of particular benefit to single-ended converters and
• Low conduction losses and minimal minority-carrier
• Designed expressly for Switch-Mode Power
• Industry-benchmark switching losses improve
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
boost PFC topologies 150W and higher
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Supply and PFC (power factor correction)
applications
efficiency of all power supply topologies
tighter parameters distribution, exceptional reliability
ARV
J
STG
CES
GE
D
D
JC
CS
JA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case )
2.0 (0.07)
Typ.
–––
–––
0.5
E
C
10 lbf•in (1.1N•m)
IRG4BC40W
-55 to + 150
TO-220AB
Max.
± 20
600
160
160
160
160
40
20
65
@V
V
CE(on) typ.
Max.
V
GE
0.77
–––
–––
80
CES
PD - 91654A
= 15V, I
= 600V
4/24/2000
C
2.05V
Units
= 20A
Units
g (oz)
°C/W
mJ
W
°C
V
A
V
1

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IRG4BC40WPBF Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR Features Features Features Features Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • ...

Page 2

IRG4BC40W Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage — (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th ...

Page 3

ave : ...

Page 4

IRG4BC40W 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02  SINGLE PULSE 0.01 ...

Page 5

1MHz ies res oes ce gc 3000  C ies 2000  C oes 1000 ...

Page 6

IRG4BC40W  2 10Ohm 150 C ° 480V 15V GE 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical Switching ...

Page 7

L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...

Page 8

IRG4BC40W Case Outline and Dimensions — TO-220AB (. 2 2 (.255) 6 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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