IRG4BC40W-SPBF International Rectifier, IRG4BC40W-SPBF Datasheet

IGBT WARP 600V 40A D2PAK

IRG4BC40W-SPBF

Manufacturer Part Number
IRG4BC40W-SPBF
Description
IGBT WARP 600V 40A D2PAK
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4BC40W-SPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
160W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Continuous Collector Current Ic
40A
Collector Emitter Saturation Voltage Vce(sat)
2.5V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
2.5V
Operating Temperature Range
-55°C To +150°C
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Other names
*IRG4BC40W-SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BC40W-SPBF
Manufacturer:
IR
Quantity:
21 400
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Features
Features
Features
Features
Features
• Lower switching losses allow more cost-effective
• Of particular benefit to single-ended converters and
• Low conduction losses and minimal minority-carrier
• Designed expressly for Switch-Mode Power
• Industry-benchmark switching losses improve
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
boost PFC topologies 150W and higher
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Supply and PFC (power factor correction)
applications
efficiency of all power supply topologies
tighter parameters distribution, exceptional reliability
ARV
J
STG
CES
GE
D
D
JC
CS
JA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case )
2.0 (0.07)
Typ.
–––
–––
0.5
E
C
10 lbf•in (1.1N•m)
IRG4BC40W
-55 to + 150
TO-220AB
Max.
± 20
600
160
160
160
160
40
20
65
@V
V
CE(on) typ.
Max.
V
GE
0.77
–––
–––
80
CES
PD - 91654A
= 15V, I
= 600V
4/24/2000
C
2.05V
Units
= 20A
Units
g (oz)
°C/W
mJ
W
°C
V
A
V
1

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IRG4BC40W-SPBF Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com PD - 91654A IRG4BC40W C V CES V CE(on) typ 15V n-channel TO-220AB Max. 600 40 20 160 160 ± ...

Page 2

... IRG4BC40W Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage — (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES ...

Page 3

... Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 5° ° rive ifie tio Frequency (kHz) (Load Current = I of fundamental) RMS 1000 100   T = 150 C ° 150 15V 1 4.0 5.0 5 Fig Typical Transfer Characteristics IRG4BC40W Tria ° ° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

Page 4

... IRG4BC40W 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02  SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V PULSE WIDTH 2.5 2.0 1.5 1.0 125 ...

Page 5

... Gate Resistance (Ohm) G Fig Typical Switching Losses vs. Gate Resistance www.irf.com  SHORTED 100 0 Fig Typical Gate Charge vs 0 -60 -40 -20 Fig Typical Switching Losses vs. IRG4BC40W = 400V = 20A Total Gate Charge (nC) G Gate-to-Emitter Voltage 10 = 10Ohm = 15V = 480V  100 120 140 160 ° Junction Temperature ( C ) ...

Page 6

... IRG4BC40W  2 10Ohm 150 C ° 480V 15V GE 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6  1000 V = 20V 125 C J 100  SAFE OPERATING AREA 100 , Collector-to-Emitter Voltage (V) Fig Turn-Off SOA www.irf.com 1000 ...

Page 7

... Load Test Circuit 50V 1000V www.irf.com 480V .T. D river ff t=5µ IRG4BC40W 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4BC40W Case Outline and Dimensions — TO-220AB (. 2 2 (.255 (.240 (. (. 1.15 (. 4.06 (.160 (. 3.55 (.140) 0.93 (.037 0.69 (.027 (. (. (. (. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR JAPAN: K& ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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