IRGB10B60KDPBF International Rectifier, IRGB10B60KDPBF Datasheet

IGBT W/DIODE 600V 22A TO-220AB

IRGB10B60KDPBF

Manufacturer Part Number
IRGB10B60KDPBF
Description
IGBT W/DIODE 600V 22A TO-220AB
Manufacturer
International Rectifier
Type
Ultrafastr

Specifications of IRGB10B60KDPBF

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 10A
Current - Collector (ic) (max)
22A
Power - Max
156W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Capacitance, Gate
620 pF
Current, Collector
22 A
Energy Rating
390 μJ
Package Type
TO-220AB
Polarity
N-Channel
Power Dissipation
156 W
Resistance, Thermal, Junction To Case
0.8 °C/W
Speed, Switching
10 to 30 kHz
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
1.8 V
Transistor Type
IGBT
Dc Collector Current
22A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Pd
104W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGB10B60KDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGB10B60KDPBF
Quantity:
9 000
Features
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
Thermal Resistance
Absolute Maximum Ratings
R
R
R
R
R
Wt
V
I
I
I
I
I
I
I
V
P
P
T
T
www.irf.com
C
C
CM
LM
F
F
FM
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current „
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Parameter
Parameter
IRGB10B60KD

TO-220AB
G
n-channel
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
–––
–––
E
C
IRGS10B60KD
-55 to +150
IRGSL10B60KDPbF
IRGB10B60KDPbF
IRGS10B60KDPbF
Max.
± 20
600
156
Typ.
D
22
12
44
44
22
10
44
62
0.50
1.44
–––
–––
–––
–––
2
Pak
V
I
t
V
C
sc
CES
CE(on)
= 12A, T
> 10µs, T
= 600V
typ. = 1.8V
IRGSL10B60KD
Max.
–––
–––
0.8
3.4
62
40
C
TO-262
=100°C
J
=150°C
11/24/04
Units
Units
°C/W
W
°C
V
A
V
g
1

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IRGB10B60KDPBF Summary of contents

Page 1

... Soldering Temperature, for 10 sec. Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA R Junction-to-Ambient (PCB Mount, steady state) θJA Wt Weight www.irf.com IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF 600V CES I = 12A > 10µ n-channel CE(on) 2 TO-220AB D ...

Page 2

IRG/B/S/SL10B60KDPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆ ∆ Temperature Coeff. of Threshold Voltage ...

Page 3

T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 100 0 100 V CE (V) Fig. ...

Page 4

IRG/B/S/SL10B60KDPbF 18V 35 VGE = 15V VGE = 12V 30 VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics ...

Page 5

V GE (V) Fig Typical -40° 5. 10A 10 ...

Page 6

IRG/B/S/SL10B60KDPbF 800 700 600 500 E OFF 400 300 E ON 200 100 (A) Fig Typ. Energy Loss vs 150°C; L=200µ 47Ω 15V ...

Page 7

Ω Ω Ω 100 Ω (A) Fig Typical Diode I T ...

Page 8

IRG/B/S/SL10B60KDPbF 450 400 350 300 250 200 150 100 50 0 1000 100 (V) Fig. 22- Typ. Capacitance vs 0V 1MHz (A) ...

Page 9

D = 0.50 0.20 0.1 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-6 1E-5 Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 1 0.20 0.10 0.05 0.01 0.1 0.02 0.01 ...

Page 10

IRG/B/S/SL10B60KDPbF DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Driver DC DUT Fig.C.T.3 - S.C.SOA Circuit 10 L VCC diode clamp / 360V DUT Rg Fig.C.T.5 - Resistive Load ...

Page 11

I CE 300 tf 200 100 Eoff Loss -100 -0.20 0.00 0.20 0.40 time(µs) Fig. WF1- Typ. Turn-off Loss Waveform @ T = 150°C using Fig. CT.4 J 100 ...

Page 12

IRG/B/S/SL10B60KDPbF E XAMPL HIS 1010 L OT CODE 1789 19, 1997 INE "C" ...

Page 13

Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" Note: "P" embly line ...

Page 14

IRG/B/S/SL10B60KDPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE HIS IS AN IRL3103L LOT CODE 1789 INT ERNAT IONAL ASS EMBLED ON WW 19, 1997 RECT IFIER ASS EMBLY ...

Page 15

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ...

Page 16

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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