IXGH20N120B IXYS, IXGH20N120B Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGH20N120B
Manufacturer Part Number
IXGH20N120B
Description
IGBT 1200V 40A TO-247
Specifications of IXGH20N120B
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.4V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
20
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.4
Tfi, Typ, Tj=25°c, Igbt, (ns)
160
Eoff, Typ, Tj=125°c, Igbt, (mj)
3.5
Rthjc, Max, Igbt, (°c/w)
0.65
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXGH20N120B D1
Part Number:
IXGH20N120B D1
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
Weight
© 2003 IXYS All rights reserved
High Voltage IGBT
Preliminary Data Sheet
Symbol
BV
V
I
I
V
CM
C25
C110
CES
GES
JM
J
stg
CGR
GES
GEM
C
CES
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (M3)
Test Conditions
I
I
V
V
I
C
C
C
C
C
C
C
J
J
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 µA, V
= 250 µA, V
= V
= 0 V, V
= 20A, V
CES
GE
VJ
GE
= 125°C, R
= ±20 V
= 15 V
GE
CE
= 0 V
= V
GE
GE
(TO-247)
= 1 MΩ
G
= 10 Ω
T
T
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
IXGH 20N120B
IXGT 20N120B
TO-247 AD
TO-268
1200
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
typ.
2.9
2.8
1.13/10Nm/lb.in.
I
CM
1200
1200
±20
±30
= 80
260
190
150
300
40
20
80
CES
max.
±100
6
4
3.4
3.8
50
5
°C
°C
°C
°C
°C
µA
nA
W
V
V
V
V
A
A
A
A
g
g
V
V
V
V
V
I
V
t
Features
Advantages
T O - 2 6 8
(IXGT)
TO-247 AD (IXGH)
G = Gate,
E = Emitter,
C25
fi(typ)
High Voltage IGBT for resonant
power supplies
- Induction heating
- Rice cookers
International standard packages
JEDEC TO-268 surface and
JEDEC TO-247 AD
Low switching losses, low V
MOS Gate turn-on
- drive simplicity
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
CES
CE(sat)
G
G
C
= 1200 V
=
= 160 ns
= 3.4 V
E
C = Collector,
TAB = Collector
E
40 A
DS98986D(05/03)
(sat)
C (TAB)
C (TAB)
Related parts for IXGH20N120B
IXGH20N120B Summary of contents
... 250 µ GE(th CES CE CES = ± GES 20A CE(sat © 2003 IXYS All rights reserved IXGH 20N120B IXGT 20N120B Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± Ω 0.8 V CES 190 -55 ... +150 150 -55 ... +150 300 260 (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 Characteristic Values (T = 25° ...
... CE CES off R thJC R (TO-247) thCK Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 1700 ...
... V - Volts CE Fig. 3. Output Characteristics @ 125 Deg 0 2 Volts CE Fig. 5. Input Admittance -40º 25ºC 1 25º Volts GE © 2003 IXYS All rights reserved 3 3 IXGH 20N120B IXGT 20N120B Fig. 2. Extended Output Characteristics @ 25 deg Volts CE Fig. 4. Temperature Dependence 40A C 1 ...
... Dashed lines - Ohms 960V Degrees Centigrade J Fig. 11. Capacitance 1 0000 000 Volts CE IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents off 40A 20A Temperature off I = 40A 20A oes C ...
... IXYS All rights reserved 13. M aximu m Tran sien t Th erm al R esistan ce 10 Puls e W idth - millis ec onds IXGH 20N120B IXGT 20N120B ...
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