IXGH20N120 IXYS, IXGH20N120 Datasheet
IXGH20N120
Manufacturer Part Number
IXGH20N120
Description
IGBT 1200V 40A TO-247
Manufacturer
IXYS
Datasheet
1.IXGH20N120.pdf
(2 pages)
Specifications of IXGH20N120
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
20
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Tfi, Typ, Tj=25°c, Igbt, (ns)
280
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.5
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH20N120
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXGH20N120B
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXGH20N120BD1
Manufacturer:
IXYS
Quantity:
3 000
Company:
Part Number:
IXGH20N120BD1
Manufacturer:
Vishay
Quantity:
10 000
IGBT
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
M
Weight
Symbol
(T
BV
V
I
I
V
© 2002 IXYS All rights reserved
CM
CES
GES
C25
C90
Preliminary Data Sheet
J
JM
stg
GE(th)
CGR
GEM
C
CE(sat)
CES
GES
d
J
CES
= 25 C, unless otherwise specified)
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (TO-247)
TO-247
TO-268
C
C
C
J
J
C
C
C
GE
C
GE
CE
CE
= 1 mA, V
= 250 A, V
= 0 V
= 0 V, V
= I
= V
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 25 C
C90
CES
, V
GE
GE
GE
= 15 V
VJ
= 20 V
CE
= 0 V
= 125 C, R
= V
GE
GE
= 1 M
G
= 47
T
T
J
J
= 25 C
= 125 C
1200
Min.
Maximum Ratings
2.5
IXGH 20N120
IXGT 20N120
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Typ.
2.0
1.13/10 Nm/lb.in.
I
CM
1200
1200
= 40
150
150
300
260
20
30
40
20
80
CES
6
5
Max.
250
100
5.0
2.5
1
mA
nA
W
C
C
C
C
C
A
V
V
V
V
V
V
V
A
A
A
A
g
g
TO-247 (IXGH)
TO-268 (IXGT)
Features
•
•
•
Applications
•
•
•
•
•
•
Advantages
•
•
•
V
I
V
t
C25
fi(typ)
International standard packages
JEDEC TO-247 and TO-268
High current handling capability
MOS Gate turn-on
- drive simplicity
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Capacitor discharge
Easy to mount with one screw
Reduces assembly time and cost
High power density
CE(sat)
CES
G
G
D S
= 1200 V
=
=
= 380 ns
E
2.5 V
40 A
DS98966 (11/02)
C (TAB)
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IXGH20N120 Summary of contents
Page 1
... CES 250 GE(th CES CE CES GES CE(sat) C C90 GE © 2002 IXYS All rights reserved IXGH 20N120 IXGT 20N120 Maximum Ratings 1200 = 1 M 1200 0.8 V CES 150 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in Characteristic Values Min. Typ. Max. 1200 2.5 5.0 ...
Page 2
... V (Clamp) > 0 higher T or increased R off J R thJC R TO-247 thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values Min. Typ. Max 1750 0 CES ...